MFG:Infineon Technologies (VA) Category:Discrete Semiconductor Products Package Cooled:N/A D/C:N/A
SPB64S, SPB70N10L, SPB73N03S2L-08 Datasheet download
Category: Discrete Semiconductor Products
MFG: Infineon Technologies (VA)
Package Cooled: N/A
D/C: N/A
Description: MOSFET N-CH 30V 73A D2PAK
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PDF/DataSheet Download
Datasheet: SPB02N60
File Size: 121401 KB
Manufacturer: Siemens Semiconductor Group
Download : Click here to Download
PDF/DataSheet Download
Datasheet: SPB70N10L
File Size: 526559 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: SPB73N03S2L-08
File Size: 425746 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
| Technical/Catalog Information | SPB70N10L |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25° C | 70A |
| Rds On (Max) @ Id, Vgs | 16 mOhm @ 50A, 10V |
| Input Capacitance (Ciss) @ Vds | 4540pF @ 25V |
| Power - Max | 250W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 240nC @ 10V |
| Package / Case | D²Pak, SMD-220, TO-263 (2 leads + tab) |
| FET Feature | Logic Level Gate |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | SPB70N10L SPB70N10L |
| Parameter | Symbol | Value | Unit |
| Continuous drain current TC = 25 °C TC = 100 °C |
ID | 70 50 |
A |
| Pulsed drain current TC = 25 °C |
ID puls | 280 | |
| Avalanche energy, single pulse ID =70A, VDD = 25 V, RGS = 25 |
EAS | 700 | mJ |
| Avalanche energy, periodic limited by Tjmax | EAR | 25 | |
| Reverse diode dv/dt IS = 70A, VDS = 0 V, di/dt = 200 A/s |
dv/dt | 6 | kV/s |
| Gate source voltage | VGS | ±20 | V |
| Power dissipation TC = 25 °C |
Ptot | 250 | W |
| Operating and storage temperature | Tj , Tstg | -55... +175 | °C |
| IEC climatic category; DIN IEC 68-1 | 55/175/56 |
·N-Channel
· Enhancement mode
· Logic Level
·175°C operating temperature
· Avalanche rated
· dv/dt rated
| Technical/Catalog Information | SPB73N03S2L-08 |
| Vendor | Infineon Technologies (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 73A |
| Rds On (Max) @ Id, Vgs | 8.1 mOhm @ 36A, 10V |
| Input Capacitance (Ciss) @ Vds | 1710pF @ 25V |
| Power - Max | 107W |
| Packaging | Cut Tape (CT) |
| Gate Charge (Qg) @ Vgs | 46.2nC @ 10V |
| Package / Case | D²Pak, SMD-220, TO-263 (2 leads + tab) |
| FET Feature | Logic Level Gate |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | SPB73N03S2L 08 SPB73N03S2L08 SPB73N03S2L08INCT ND SPB73N03S2L08INCTND SPB73N03S2L08INCT |
| Parameter | Symbol | Value | Unit |
| Continuous drain current1) TC = 25 °C |
ID | 73 62 |
A |
| Pulsed drain current TC = 25 °C |
ID puls | 320 | |
| Avalanche energy, single pulse ID =73A, VDD = 25 V, RGS = 25 |
EAS | 170 | mJ |
| Repetitive avalanche energy, limited by Tjmax 2) | EAR | 10 | |
| Reverse diode dv/dt IS =73 A, VDS =24, di/dt = 200 A/s, Tjmax = 175 °C |
dv/dt | 6 | kV/s |
| Gate source voltage | VGS | ±20 | V |
| Power dissipation TC = 25 °C |
Ptot | 107 | W |
| Operating and storage temperature | Tj , Tstg | -55... +175 | °C |
| IEC climatic category; DIN IEC 68-1 | 55/175/56 |
1 Current limited by bondwire ; with an RthJC = 1.4K/W the chip is able to carry ID= 873A at 25°C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos
2 Defined by design. Not subject to production test
· N-Channel
· Enhancement mode
· Logic Level
· Excellent Gate Charge x RDS(on) product (FOM)
· Superior thermal resistance
· 175°C operating temperature
· Avalanche rated
· dv/dt rated
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