MFG:Infineon Technologies Category:Discrete Semiconductor Products Package Cooled:263 D/C:800/REEL
SPB80N03L, SPB80N03S2-03, SPB80N03S2L-03 Datasheet download
Category: Discrete Semiconductor Products
MFG: Infineon Technologies
Package Cooled: 263
D/C: 800/REEL
Description: MOSFET N-CH 30V 80A D2PAK
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PDF/DataSheet Download
Datasheet: SPB80N03L
File Size: 92046 KB
Manufacturer: Infineon
Download : Click here to Download
PDF/DataSheet Download
Datasheet: SPB80N03S2-03
File Size: 428479 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: SPB80N03S2L-03
File Size: 425610 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
| Parameter | Symbol |
Value |
Unit |
| Continuous drain current TC = 25 , 1) TC = 100 |
ID |
80 80 |
A |
| Pulsed drain current TC = 25 | ID puls |
320 | |
| Avalanche energy, single pulse ID =80 A, VDD = 25 V, RGS = 25 |
EAS |
700 |
mJ |
| Avalanche current,periodic limited byTjmax | IAR |
80 |
A |
| Avalanche energy,periodic limited byTj(max) | EAR |
30 |
mJ |
| Reverse diode dv/dt IS =80 A, VDS = 24 V, di/dt = 200 A/s, Tjmax = 175 |
dv/dt |
6 |
kV/s |
| Gate source voltage | VGS |
±14 |
V |
| Gate source peak voltage, aperiodic | Vgs |
±20 |
V |
| Power dissipation TC = 25 | Ptot |
300 |
W |
| Operating temperature | Tj |
-55 ...+150 |
|
| Storage temperature | Tstg |
-55 ...+150 | |
| IEC climatic category; DIN IEC 68-1 |
55/175/56 |
| Technical/Catalog Information | SPB80N03S2-03 |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 80A |
| Rds On (Max) @ Id, Vgs | 3.1 mOhm @ 80A, 10V |
| Input Capacitance (Ciss) @ Vds | 7020pF @ 25V |
| Power - Max | 300W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 150nC @ 10V |
| Package / Case | D²Pak, SMD-220, TO-263 (2 leads + tab) |
| FET Feature | Standard |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | SPB80N03S2 03 SPB80N03S203 |
| Parameter | Symbol | Value | Unit |
| Continuous drain current 1) TC = 25 °C |
ID | 80 80 |
A |
| Pulsed drain current TC = 25 °C |
ID puls | 320 | |
| Avalanche energy, single pulse ID =-80A, VDD = 25 V, RGS = 25 |
EAS | 810 | mJ |
| Repetitive avalanche energy, limited by Tjmax2) | EAR | 30 | |
| Reverse diode dv/dt IS = 80 A, VDS = 24 , di/dt = 200 A/s, Tjmax = 175 °C |
dv/dt | 6 | kV/s |
| Gate source voltage | VGS | ±20 | V |
| Power dissipation TC = 25 °C |
Ptot | 300 | W |
| Operating and storage temperature | Tj , Tstg | -55... +175 | °C |
| IEC climatic category; DIN IEC 68-1 | 55/175/56 |
1Current limited by bondwire ; with an RthJC = 0.5K/W the chip is able to carry ID= 307A at 25°C, for detailed
information see app.-note ANPS071E available at www.infineon.com/optimos
2Defined by design. Not subject to production test
| Technical/Catalog Information | SPB80N03S2L-03 |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 80A |
| Rds On (Max) @ Id, Vgs | 2.8 mOhm @ 80A, 10V |
| Input Capacitance (Ciss) @ Vds | 8180pF @ 25V |
| Power - Max | 300W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 220nC @ 10V |
| Package / Case | D²Pak, SMD-220, TO-263 (2 leads + tab) |
| FET Feature | Logic Level Gate |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | SPB80N03S2L 03 SPB80N03S2L03 |
| Parameter | Symbol | Value | Unit |
| Continuous drain current 1) TC = 25 °C |
ID | 80 80 |
A |
| Pulsed drain current TC = 25 °C |
ID puls | 320 | |
| Avalanche energy, single pulse ID =80A, VDD = 25 V, RGS = 25 |
EAS | 810 | mJ |
| Repetitive avalanche energy, limited by Tjmax 2) | EAR | 30 | |
| Reverse diode dv/dt IS = 80 A, VDS = 24 , di/dt = 200 A/s, Tjmax = 175 °C |
dv/dt | 6 | kV/s |
| Gate source voltage | VGS | ±20 | V |
| Power dissipation TC = 25 °C |
Ptot | 300 | W |
| Operating and storage temperature | Tj , Tstg | -55... +175 | °C |
| IEC climatic category; DIN IEC 68-1 | 55/175/56 |
1Current limited by bondwire ; with an RthJC = 0.5K/W the chip is able to carry ID= 307A at 25°C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos
2Defined by design. Not subject to production test
· N-Channel
· Enhancement mode
· Logic Level
· Excellent Gate Charge x RDS(on) product (FOM)
· Superior thermal resistance
· 175°C operating temperature
· Avalanche rated
· dv/dt rated
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