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Avalanche energy, single pulse ID =80A, VDD = 25 V, RGS = 25
EAS
380
mJ
Repetitive avalanche energy, limited by Tjmax 2)
EAR
18
Reverse diode dv/dt IS = 80 A, VDS = 24 , di/dt = 200 A/s, Tjmax = 175 °C
dv/dt
6
kV/s
Gate source voltage
VGS
±20
V
Power dissipation TC = 25 °C
Ptot
188
W
Operating and storage temperature
Tj , Tstg
-55... +175
°C
IEC climatic category; DIN IEC 68-1
55/175/56
1Current limited by bondwire ; with an RthJC = 0.5K/W the chip is able to carry ID= 307A at 25°C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos 2Defined by design. Not subject to production test
SPB80N03S2L-04 Features
· N-Channel · Enhancement mode · Logic Level · Excellent Gate Charge x RDS(on) product (FOM) · Superior thermal resistance · 175°C operating temperature · Avalanche rated · dv/dt rated
Avalanche energy, single pulse ID =80A, VDD = 25 V, RGS = 25
EAS
325
mJ
Repetitive avalanche energy, limited by Tjmax 2)
EAR
16
Reverse diode dv/dt IS = 80 A, VDS = 24 , di/dt = 200 A/s, Tjmax = 175 °C
dv/dt
6
kV/s
Gate source voltage
VGS
±20
V
Power dissipation TC = 25 °C
Ptot
167
W
Operating and storage temperature
Tj , Tstg
-55... +175
°C
IEC climatic category; DIN IEC 68-1
55/175/56
1Current limited by bondwire ; with an RthJC = 0.5K/W the chip is able to carry ID= 307A at 25°C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos 2Defined by design. Not subject to production test
SPB80N03S2L-05 Features
· N-Channel · Enhancement mode · Logic Level · Excellent Gate Charge x RDS(on) product (FOM) · Superior thermal resistance · 175°C operating temperature · Avalanche rated · dv/dt rated
Avalanche energy, single pulse ID =20A, VDD = 25 V, RGS = 25
EAS
240
mJ
Repetitive avalanche energy, limited by Tjmax 2)
EAR
15
Reverse diode dv/dt IS = 80 A, VDS = 24 , di/dt = 200 A/s, Tjmax = 175 °C
dv/dt
6
kV/s
Gate source voltage
VGS
±20
V
Power dissipation TC = 25 °C
Ptot
150
W
Operating and storage temperature
Tj , Tstg
-55... +175
°C
IEC climatic category; DIN IEC 68-1
55/175/56
1Current limited by bondwire ; with an RthJC = 0.5K/W the chip is able to carry ID= 307A at 25°C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos 2Defined by design. Not subject to production test