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Avalanche energy, single pulse ID =80A, VDD = 25 V, RGS = 25
EAS
810
mJ
Repetitive avalanche energy, limited by Tjmax 2)
EAR
30
Reverse diode dv/dt IS = 80 A, VDS = 32 , di/dt = 200 A/s, Tjmax = 175 °C
dv/dt
6
kV/s
Gate source voltage
VGS
±20
V
Power dissipation TC = 25 °C
Ptot
300
W
Operating and storage temperature
Tj , Tstg
-55... +175
°C
IEC climatic category; DIN IEC 68-1
55/175/56
1Current limited by bondwire ; with an RthJC = 0.5K/W the chip is able to carry ID= 307A at 25°C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos 2Defined by design. Not subject to production test
I D=80 A, VDS=40 V, di /dt =200 A/s, T j,max=175 °C
6
kV/s
Gate source voltage
VGS
±20
V
Power dissipation
Ptot
T C=25 °C
300
W
Operating and storage temperature
T j, T stg
-55 ... +175
°C
IEC climatic category; DIN IEC 68-1
55/175/56
SPB80N06S-08 Features
• N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Avalanche test • Repetive Avalanche up to Tjmax = 175 °C • dv /dt rated
SPB80N06S2-05 Parameters
Technical/Catalog Information
SPB80N06S2-05
Vendor
Infineon Technologies
Category
Discrete Semiconductor Products
Mounting Type
Surface Mount
FET Polarity
N-Channel
Drain to Source Voltage (Vdss)
55V
Current - Continuous Drain (Id) @ 25° C
80A
Rds On (Max) @ Id, Vgs
4.8 mOhm @ 80A, 10V
Input Capacitance (Ciss) @ Vds
6790pF @ 25V
Power - Max
300W
Packaging
Tape & Reel (TR)
Gate Charge (Qg) @ Vgs
170nC @ 10V
Package / Case
D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature
Standard
Lead Free Status
Contains Lead
RoHS Status
RoHS Non-Compliant
Other Names
SPB80N06S2 05 SPB80N06S205
SPB80N06S2-05 Maximum Ratings
Parameter
Symbol
Value
Unit
Continuous drain current 1) TC = 25 °C
ID
80 80
A
Pulsed drain current TC = 25 °C
IDpuls
320
Avalanche energy, single pulse ID =80A, VDD = 25 V, RGS = 25
EAS
810
mJ
Repetitive avalanche energy, limited by Tjmax 2)
EAR
30
Reverse diode dv/dt IS = 80 A, VDS = 44 , di/dt = 200 A/s, Tjmax = 175 °C
dv/dt
6
kV/s
Gate source voltage
VGS
±20
V
Power dissipation TC = 25 °C
Ptot
300
W
Operating and storage temperature
Tj , Tstg
-55... +175
°C
IEC climatic category; DIN IEC 68-1
55/175/56
1Current limited by bondwire ; with an RthJC = 0.5K/W the chip is able to carry ID= 307A at 25°C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos 2Defined by design. Not subject to production test