MFG:Infineon Technologies (VA) Category:Discrete Semiconductor Products Package Cooled:. D/C:TO-252
SPD08P06P, SPD09N05, SPD09P06PL Datasheet download
Category: Discrete Semiconductor Products
MFG: Infineon Technologies (VA)
Package Cooled: .
D/C: TO-252
Description: MOSFET P-CH 60V 9.7A DPAK
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PDF/DataSheet Download
Datasheet: SPD08P06P
File Size: 116684 KB
Manufacturer: INFINEON [Infineon Technologies AG]
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PDF/DataSheet Download
Datasheet: SPD09N05
File Size: 149814 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: SPD09P06PL
File Size: 236325 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
| Technical/Catalog Information | SPD08P06P |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25° C | 8.83A |
| Rds On (Max) @ Id, Vgs | 300 mOhm @ 6.2A, 10V |
| Input Capacitance (Ciss) @ Vds | 420pF @ 25V |
| Power - Max | 42W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 13nC @ 10V |
| Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | SPD08P06P SPD08P06P |
| Parameter | Symbol | Value | Unit |
| Continuous drain current TC = 25 °C TC = 100 °C |
ID | -8.8 -6.2 |
A |
| Pulsed drain current TC = 25 °C |
ID puls | -35.2 | |
| Avalanche energy, single pulse ID =-8.8A, VDD = -25 V, RGS = 25 |
EAS | 70 | mJ |
| Repetitive avalanche energy, limited by Tjmax | EAR | 4.2 | |
| Reverse diode dv/dt IS =-8.8 A, VDS =-48V, di/dt = 200 A/s, Tjmax = 175 °C |
dv/dt | 6 | kV/s |
| Gate source voltage | VGS | ±20 | V |
| Power dissipation TC = 25 °C |
Ptot | 42 | W |
| Operating and storage temperature | Tj , Tstg | -55... +175 | °C |
| IEC climatic category; DIN IEC 68-1 | 55/175/56 |
| Parameter | Symbol | Value | Unit |
| Continuous drain current TC = 25 °C TC = 100 °C |
ID | 9.2 6.5 |
A |
| Pulsed drain current TC = 25 °C |
ID puls | 37 | |
| Avalanche energy, single pulse ID =9.2A, VDD = 25 V, RGS = 25 |
EAS | 35 | mJ |
| Repetitive avalanche energy, limited by Tjmax | EAR | 2.4 | |
| Reverse diode dv/dt IS =9.2 A, VDS =40V, di/dt = 200 A/s, |
dv/dt | 6 | kV/s |
| Gate source voltage | VGS | ±20 | V |
| Power dissipation TC = 25 °C |
Ptot | 24 | W |
| Operating and storage temperature | Tj , Tstg | -55... +175 | °C |
| IEC climatic category; DIN IEC 68-1 | 55/175/56 |
| Technical/Catalog Information | SPD09P06PL |
| Vendor | Infineon Technologies (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25° C | 9.7A |
| Rds On (Max) @ Id, Vgs | 250 mOhm @ 6.8A, 10V |
| Input Capacitance (Ciss) @ Vds | 450pF @ 25V |
| Power - Max | 42W |
| Packaging | Cut Tape (CT) |
| Gate Charge (Qg) @ Vgs | 21nC @ 10V |
| Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | SPD09P06PL SPD09P06PL SPD09P06PLINCT ND SPD09P06PLINCTND SPD09P06PLINCT |
| Parameter | Symbol | Value | Unit |
| Continuous drain current TC = 25 °C TC = 100 °C |
ID | -9.7 -6.8 |
A |
| Pulsed drain current TC = 25 °C |
ID puls | -38.8 | |
| Avalanche energy, single pulse ID =-9.7A, VDD = -25 V, RGS = 25 |
EAS | 70 | mJ |
| Repetitive avalanche energy, limited by Tjmax | EAR | 4.2 | |
| Reverse diode dv/dt IS =-9.7 A, VDS =-25V, di/dt = 200 A/s,Tjmax=175°C |
dv/dt | 6 | kV/s |
| Gate source voltage | VGS | ±20 | V |
| Power dissipation TC = 25 °C |
Ptot | 42 | W |
| Operating and storage temperature | Tj , Tstg | -55... +175 | °C |
| IEC climatic category; DIN IEC 68-1 | 55/175/56 |
· P-Channel
· Enhancement mode
· Logic Level
·175°C operating temperature
· Avalanche rated
· dv/dt rated
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