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MFG:infineon  Package Cooled:P-TO252  D/C:09+  

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Part Number: SPD02N50C3

 

MFG: infineon

Package Cooled: P-TO252

D/C: 09+

 

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SPD02N50C3 Maximum Ratings

Parameter Symbol Value Unit
Continuous drain current
TC = 25 °C
TC = 100 °C
ID 1.8
1.1
A
Pulsed drain current, tp limited by Tjmax ID puls 5.4
Avalanche energy, single pulse
ID=1.35A, VDD=50V
EAS 50 mJ
Avalanche energy, repetitive tAR limited by Tjmax1)
ID=1.8A, VDD=50V
EAR 0.07
Avalanche current, repetitive tAR limited by Tjmax IAR 1.8 A
Gate source voltage VGS ±20 V
Gate source voltage AC (f >1Hz) VGS ±30
Power dissipation, TC = 25°C Ptot 35 W
Operating and storage temperature Tj , Tstg -55...+150 °C
Drain Source voltage slope
VDS = 400 V, ID = 1.8 A, Tj = 125 °C
dv/dt 50 V/ns

1 Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f.

SPD02N50C3 Features

• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance

SPD02N50C3 datasheet

SPD02N50C3
PDF/DataSheet Download

  • Datasheet: SPD02N50C3
  • File Size: 273986 KB
  • Manufacturer: INFINEON [Infineon Technologies AG]
  • Click here to Download

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