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SPD01N50M2

Features: · New revolutionary high voltage technology· Ultra low gate charge· Periodic avalanche rated· Extreme dv/dt rated· Optimized capacitances· Improved noise immunity· Former development designation: SPUx7N60S5/SPDx7N60S5Specifications Parameter Symbol Value Unit Conti...

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SPD01N50M2: Features: · New revolutionary high voltage technology· Ultra low gate charge· Periodic avalanche rated· Extreme dv/dt rated· Optimized capacitances· Improved noise immunity· Former development desig...

SPD01N50M2 Data Sheet

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Part Number:
SPD01N50M2
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Description



Features:

· New revolutionary high voltage technology
· Ultra low gate charge
· Periodic avalanche rated
· Extreme dv/dt rated
· Optimized capacitances
· Improved noise immunity
· Former development designation: SPUx7N60S5/SPDx7N60S5


Specifications

Parameter

Symbol

Value

Unit

Continuous drain current
TC = 25 °C
TC = 100 °C

ID

0.8
0.5

A

Pulsed drain current, tp = 1ms 1)
TC = 25 °C

ID puls

1.6

A

Avalanche energy, single pulse
ID = 0.8 A, VDD = 50 V, RGS = 25 W
Periodic avalanche energy EAR only limited by Tjmax

EAS

tbd

mJ

Reverse diode dv/dt
IS = 0.8 A, VDS<VDSS, di/dt = 100 A/s,
Tjmax = 150 °C

dv/dt

6

kV/s

Gate source voltage

VGS

±20

V

Power dissipation
TC = 25 °C

Ptot

11

W

Operating and storage temperature

Tj , Tstg

-55 ...+150

°C




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