MFG:Infineon Technologies Category:Discrete Semiconductor Products Package Cooled:. D/C:2008+
SPD35N10, SPD4816T220M, SPD4832PT181M Datasheet download
Category: Discrete Semiconductor Products
MFG: Infineon Technologies
Package Cooled: .
D/C: 2008+
Description: MOSFET N-CH 100V 35A DPAK
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PDF/DataSheet Download
Datasheet: SPD35N10
File Size: 569372 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: SPD005G
File Size: 52325 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: SPD005G
File Size: 52325 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
| Technical/Catalog Information | SPD35N10 |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25° C | 35A |
| Rds On (Max) @ Id, Vgs | 44 mOhm @ 26.4A, 10V |
| Input Capacitance (Ciss) @ Vds | 1570pF @ 25V |
| Power - Max | 150W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 65nC @ 10V |
| Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
| FET Feature | Standard |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | SPD35N10 SPD35N10 SPD35N10INTR ND SPD35N10INTRND SPD35N10INTR |
| Parameter | Symbol | Value | Unit |
| Continuous drain current1) TC = 25 °C TC=100°C |
ID | 35 26.4 |
A |
| Pulsed drain current TC = 25 °C |
ID puls | 140 | |
| Avalanche energy, single pulse ID =35 A, VDD = 25 V, RGS = 25 |
EAS | 245 | mJ |
| Reverse diode dv/dt IS =35 A, VDS = 80 V, di/dt = 200 A/s, Tjmax = 175 °C |
dv/dt | 6 | kV/s |
| Gate source voltage | VGS | ±20 | V |
| Power dissipation TC = 25 °C |
Ptot | 150 | W |
| Operating and storage temperature | Tj , Tstg | -55... +175 | °C |
| IEC climatic category; DIN IEC 68-1 | 55/175/56 |
· N-Channel
· Enhancement mode
·175°C operating temperature
· Avalanche rated
· dv/dt rated
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