MFG:Infineon Technologies (VA) Category:Discrete Semiconductor Products Package Cooled:06+ D/C:6500
SPD4832PT391M, SPD50N03S2-07, SPD50N03S2L-06 Datasheet download
Category: Discrete Semiconductor Products
MFG: Infineon Technologies (VA)
Package Cooled: 06+
D/C: 6500
Description: MOSFET N-CH 30V 50A DPAK
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PDF/DataSheet Download
Datasheet: SPD005G
File Size: 52325 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: SPD50N03S2-07
File Size: 268129 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: SPD50N03S2L-06
File Size: 269069 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
| Technical/Catalog Information | SPD50N03S2-07 |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 50A |
| Rds On (Max) @ Id, Vgs | 7.3 mOhm @ 50A, 10V |
| Input Capacitance (Ciss) @ Vds | 2170pF @ 25V |
| Power - Max | 136W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 46.5nC @ 10V |
| Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | SPD50N03S2 07 SPD50N03S207 |
| Parameter | Symbol | Value | Unit |
| Continuous drain current1) TC = 25 °C |
ID | 50 50 |
A |
| Pulsed drain current TC = 25 °C |
ID puls | 200 | |
| Avalanche energy, single pulse ID =50A, VDD = 25 V, RGS = 25 |
EAS | 250 | mJ |
| Repetitive avalanche energy, limited by Tjmax 2) | EAR | 13 | |
| Reverse diode dv/dt IS =50 A, VDS =24V, di/dt = 200 A/s,Tjmax=175°C |
dv/dt | 6 | kV/s |
| Gate source voltage | VGS | ±20 | V |
| Power dissipation TC = 25 °C |
Ptot | 136 | W |
| Operating and storage temperature | Tj , Tstg | -55... +175 | °C |
| IEC climatic category; DIN IEC 68-1 | 55/175/56 |
1 Current limited by bondwire ; with an RthJC = 1.1K/W the chip is able to carry ID=106A at 25°C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos
2 Defined by design. Not subject to production test
· N-Channel
· Enhancement mode
· Excellent Gate Charge x RDS(on) product (FOM)
· Superior thermal resistance
· 175°C operating temperature
· Avalanche rated
· dv/dt rated
| Technical/Catalog Information | SPD50N03S2L-06 |
| Vendor | Infineon Technologies (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 50A |
| Rds On (Max) @ Id, Vgs | 6.4 mOhm @ 50A, 10V |
| Input Capacitance (Ciss) @ Vds | 2530pF @ 25V |
| Power - Max | 136W |
| Packaging | Cut Tape (CT) |
| Gate Charge (Qg) @ Vgs | 68nC @ 10V |
| Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | SPD50N03S2L 06 SPD50N03S2L06 SPD50N03S2L06INCT ND SPD50N03S2L06INCTND SPD50N03S2L06INCT |
| Parameter | Symbol | Value | Unit |
| Continuous drain current1) TC = 25 °C |
ID | 50 50 |
A |
| Pulsed drain current TC = 25 °C |
ID puls | 200 | |
| Avalanche energy, single pulse ID =50A, VDD = 25 V, RGS = 25 |
EAS | 250 | mJ |
| Repetitive avalanche energy, limited by Tjmax 2) | EAR | 13 | |
| Reverse diode dv/dt IS =50 A, VDS =24V, di/dt = 200 A/s,Tjmax=175°C |
dv/dt | 6 | kV/s |
| Gate source voltage | VGS | ±20 | V |
| Power dissipation TC = 25 °C |
Ptot | 136 | W |
| Operating and storage temperature | Tj , Tstg | -55... +175 | °C |
| IEC climatic category; DIN IEC 68-1 | 55/175/56 |
1 Current limited by bondwire ; with an RthJC = 1.1K/W the chip is able to carry ID=113A at 25°C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos
2 Defined by design. Not subject to production test
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