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SPI07N60S5, SPI07N65C3, SPI08N50C3

Table of contents:
Info of SPI07N60S5
Info of SPI07N65C3
Info of SPI08N50C3

SPI07N60S5, SPI07N65C3, SPI08N50C3 Selling Leads, Datasheet

MFG:Infineon Technologies Category:Discrete Semiconductor Products Package Cooled:. D/C:2008+

SPI07N60S5, SPI07N65C3, SPI08N50C3 Datasheet download

Five Points

Part Number: SPI07N60S5

Category: Discrete Semiconductor Products

MFG: Infineon Technologies

Package Cooled: .

D/C: 2008+

Description: MOSFET N-CH 560V 7.6A TO-262

Price Break

1
10
100
1000

Unit Price

2.26000
2.12300
1.69850
.97309

Extended Price

2.26
21.23
169.85
973.09

(All prices are in USD) Prices for reference only

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SPI07N60S5 Parameters

Technical/Catalog Information	SPI07N60S5
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25° C	7.3A
Rds On (Max) @ Id, Vgs	600 mOhm @ 4.6A, 10V
Input Capacitance (Ciss) @ Vds	970pF @ 25V
Power - Max	83W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	35nC @ 10V
Package / Case	I²Pak, TO-262 (3 straight leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	SPI07N60S5 SPI07N60S5 SPI07N60S5IN ND SPI07N60S5INND SPI07N60S5IN

SPI07N60S5 Maximum Ratings

Parameter	Symbol	Value	Unit
Continuous drain current T_C = 25 °C T_C= 100 °C	I_D	7.3 4.6	A
Pulsed drain current, t_p limited by T_jmax	I_D _puls	14.6	A
Avalanche energy, single pulse I_D=-A, V_DD=50V	E_AS	230	mJ
Avalanche energy, repetitive t_AR limited by T_jmax¹) I_D=7.3A, V_DD=50V	E_AR	0.5	mJ
Avalanche current, repetitive t_AR limited by T_jmax	I_AR	7.3	A
Gate source voltage	V_GS	±20	V
Gate source voltage AC (f >1Hz)	V_GS	±30	V
Power dissipation, T_C = 25°C	P_tot	83	W
Operating and storage temperature	T_j, T_stg	-55...+150	°C
Drain Source voltage slope V_DS = 480 V, I_D = 7.3 A, T_j = 125 °C	dv/dt	20	V/ns

1 Repetitve avalanche causes additional power losses that can be calculated as P_AV=E_AR*f.

SPI07N60S5 Features

• New revolutionary high voltage technology
• Worldwide best R_DS(on) in TO 220
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance

SPI07N65C3 Parameters

Technical/Catalog Information	SPI07N65C3
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25° C	7.3A
Rds On (Max) @ Id, Vgs	600 mOhm @ 4.6A, 10V
Input Capacitance (Ciss) @ Vds	790pF @ 25V
Power - Max	83W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	27nC @ 10V
Package / Case	I²Pak, TO-262 (3 straight leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	SPI07N65C3 SPI07N65C3 SPI07N65C3IN ND SPI07N65C3INND SPI07N65C3IN

SPI07N65C3 Maximum Ratings

Parameter	Symbol	Value		Unit
Parameter	Symbol	SPP_I	SPA	Unit
Continuous drain current T_C = 25 °C T_C= 100 °C	I_D	7.3 4.6	7.3¹) 4.6¹)	A
Pulsed drain current, t_p limited by T_jmax	I_D _puls	21.9	21.9	A
Avalanche energy, single pulse I_D=1.5A, V_DD=50V	E_AS	230	230	mJ
Avalanche energy, repetitive t_AR limited by T_jmax²) I_D=2.5A, V_DD=50V	E_AR	0.5	0.5	mJ
Avalanche current, repetitive t_AR limited by T_jmax	I_AR	2.5	2.5	A
Gate source voltage	V_GS	±20	±20	V
Gate source voltage AC (f >1Hz)	V_GS	±30	±30
Power dissipation, T_C = 25°C	P_tot	83	32	W
Operating and storage temperature	T_j, T_stg	-55...+150		°C
Drain Source voltage slope V_DS = 480 V, I_D = 7.3 A, T_j = 125 °C	dv/dt	50		V/ns

SPI07N65C3 Features

• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• High peak current capability
• Improved transconductance
• P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

SPI08N50C3 Parameters

Technical/Catalog Information	SPI08N50C3
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	560V
Current - Continuous Drain (Id) @ 25° C	7.6A
Rds On (Max) @ Id, Vgs	600 mOhm @ 4.6A, 10V
Input Capacitance (Ciss) @ Vds	750pF @ 25V
Power - Max	32W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	32nC @ 10V
Package / Case	I²Pak, TO-262 (3 straight leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	SPI08N50C3 SPI08N50C3 SPI08N50C3IN ND SPI08N50C3INND SPI08N50C3IN

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