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SPI11N65C3

MOSFET COOL MOS N-CH 650V 11A

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SeekIC No. : 00146131 Detail

SPI11N65C3: MOSFET COOL MOS N-CH 650V 11A

SPI11N65C3 Data Sheet

floor Price/Ceiling Price

US $ .97~1.72 / Piece | Get Latest Price
Part Number:
SPI11N65C3
Mfg:
Infineon Technologies
Supply Ability:
5000

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  • 10~100
  • 100~250
  • Unit Price
  • $1.72
  • $1.55
  • $1.24
  • $.97
  • Processing time
  • 15 Days
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  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 650 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 11 A
Resistance Drain-Source RDS (on) : 0.38 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-262 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Drain-Source Breakdown Voltage : 650 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 11 A
Package / Case : TO-262
Resistance Drain-Source RDS (on) : 0.38 Ohms


Features:

• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• High peak current capability
• Improved transconductance


Specifications

Parameter Symbol Value Unit
SPP_I SPA
Continuous drain current
TC = 25 °C
TC = 100 °C		 ID 11
7		 111)
71)		 A
Pulsed drain current, tp limited by Tjmax ID puls 33 33 A
Avalanche energy, single pulse
ID=2.5A, VDD=50V		 EAS 340 340 mJ
Avalanche energy, repetitive tAR limited by Tjmax2)
ID=4A, VDD=50V		 EAR 0.6 0.6
Avalanche current, repetitive tAR limited by Tjmax IAR 4 4 A
Gate source voltage VGS ±20 ±20 V
Gate source voltage AC (f >1Hz) VGS ±30 ±30
Power dissipation, TC = 25°C Ptot 125 33 W
Operating and storage temperature Tj , Tstg -55...+150 °C
Drain Source voltage slope
VDS = 480 V, ID = 11 A, Tj = 125 °C		 dv/dt 50 V/ns

2Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f.


Parameters:

Technical/Catalog InformationSPI11N65C3
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25° C11A
Rds On (Max) @ Id, Vgs380 mOhm @ 7A, 10V
Input Capacitance (Ciss) @ Vds 1200pF @ 25V
Power - Max125W
PackagingTube
Gate Charge (Qg) @ Vgs60nC @ 10V
Package / CaseI²Pak, TO-262 (3 straight leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names SPI11N65C3
SPI11N65C3
SPI11N65C3IN ND
SPI11N65C3INND
SPI11N65C3IN



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