MFG:Infineon Technologies Category:Discrete Semiconductor Products Package Cooled:P-TO262-3-1 D/C:2008+
SPI80N03S2L-03, SPI80N03S2L-04, SPI80N03S2L-05 Datasheet download
Category: Discrete Semiconductor Products
MFG: Infineon Technologies
Package Cooled: P-TO262-3-1
D/C: 2008+
Description: MOSFET N-CH 30V 80A I2PAK
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PDF/DataSheet Download
Datasheet: SPI80N03S2L-03
File Size: 425610 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: SPI80N03S2L-04
File Size: 427949 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: SPI80N03S2L-05
File Size: 423026 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
| Technical/Catalog Information | SPI80N03S2L-03 |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 80A |
| Rds On (Max) @ Id, Vgs | 3.1 mOhm @ 80A, 10V |
| Input Capacitance (Ciss) @ Vds | 8180pF @ 25V |
| Power - Max | 300W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 220nC @ 10V |
| Package / Case | I²Pak, TO-262 (3 straight leads + tab) |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | SPI80N03S2L 03 SPI80N03S2L03 |
| Parameter | Symbol | Value | Unit |
| Continuous drain current 1) TC = 25 °C |
ID | 80 80 |
A |
| Pulsed drain current TC = 25 °C |
ID puls | 320 | |
| Avalanche energy, single pulse ID =80A, VDD = 25 V, RGS = 25 |
EAS | 810 | mJ |
| Repetitive avalanche energy, limited by Tjmax 2) | EAR | 30 | |
| Reverse diode dv/dt IS = 80 A, VDS = 24 , di/dt = 200 A/s, Tjmax = 175 °C |
dv/dt | 6 | kV/s |
| Gate source voltage | VGS | ±20 | V |
| Power dissipation TC = 25 °C |
Ptot | 300 | W |
| Operating and storage temperature | Tj , Tstg | -55... +175 | °C |
| IEC climatic category; DIN IEC 68-1 | 55/175/56 |
1Current limited by bondwire ; with an RthJC = 0.5K/W the chip is able to carry ID= 307A at 25°C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos
2Defined by design. Not subject to production test
· N-Channel
· Enhancement mode
· Logic Level
· Excellent Gate Charge x RDS(on) product (FOM)
· Superior thermal resistance
· 175°C operating temperature
· Avalanche rated
· dv/dt rated
| Technical/Catalog Information | SPI80N03S2L-04 |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 80A |
| Rds On (Max) @ Id, Vgs | 4.2 mOhm @ 80A, 10V |
| Input Capacitance (Ciss) @ Vds | 3900pF @ 25V |
| Power - Max | 188W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 105nC @ 10V |
| Package / Case | I²Pak, TO-262 (3 straight leads + tab) |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | SPI80N03S2L 04 SPI80N03S2L04 |
| Parameter | Symbol | Value | Unit |
| Continuous drain current 1) TC = 25 °C |
ID | 80 80 |
A |
| Pulsed drain current TC = 25 °C |
ID puls | 320 | |
| Avalanche energy, single pulse ID =80A, VDD = 25 V, RGS = 25 |
EAS | 380 | mJ |
| Repetitive avalanche energy, limited by Tjmax 2) | EAR | 18 | |
| Reverse diode dv/dt IS = 80 A, VDS = 24 , di/dt = 200 A/s, Tjmax = 175 °C |
dv/dt | 6 | kV/s |
| Gate source voltage | VGS | ±20 | V |
| Power dissipation TC = 25 °C |
Ptot | 188 | W |
| Operating and storage temperature | Tj , Tstg | -55... +175 | °C |
| IEC climatic category; DIN IEC 68-1 | 55/175/56 |
1Current limited by bondwire ; with an RthJC = 0.5K/W the chip is able to carry ID= 307A at 25°C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos
2Defined by design. Not subject to production test
| Technical/Catalog Information | SPI80N03S2L-05 |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 80A |
| Rds On (Max) @ Id, Vgs | 5.2 mOhm @ 55A, 10V |
| Input Capacitance (Ciss) @ Vds | 3320pF @ 25V |
| Power - Max | 167W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 89.7nC @ 10V |
| Package / Case | I²Pak, TO-262 (3 straight leads + tab) |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | SPI80N03S2L 05 SPI80N03S2L05 |
| Parameter | Symbol | Value | Unit |
| Continuous drain current 1) TC = 25 °C |
ID | 80 80 |
A |
| Pulsed drain current TC = 25 °C |
ID puls | 320 | |
| Avalanche energy, single pulse ID =80A, VDD = 25 V, RGS = 25 |
EAS | 325 | mJ |
| Repetitive avalanche energy, limited by Tjmax 2) | EAR | 16 | |
| Reverse diode dv/dt IS = 80 A, VDS = 24 , di/dt = 200 A/s, Tjmax = 175 °C |
dv/dt | 6 | kV/s |
| Gate source voltage | VGS | ±20 | V |
| Power dissipation TC = 25 °C |
Ptot | 167 | W |
| Operating and storage temperature | Tj , Tstg | -55... +175 | °C |
| IEC climatic category; DIN IEC 68-1 | 55/175/56 |
1Current limited by bondwire ; with an RthJC = 0.5K/W the chip is able to carry ID= 307A at 25°C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos
2Defined by design. Not subject to production test
· N-Channel
· Enhancement mode
· Logic Level
· Excellent Gate Charge x RDS(on) product (FOM)
· Superior thermal resistance
· 175°C operating temperature
· Avalanche rated
· dv/dt rated
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