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SPP04N60C3, SPP04N60C3., SPP04N60S5

Table of contents:
Info of SPP04N60C3
Info of SPP04N60C3.
Info of SPP04N60S5

SPP04N60C3, SPP04N60C3., SPP04N60S5 Selling Leads, Datasheet

MFG:Infineon Technologies Category:Discrete Semiconductor Products Package Cooled:P-TO220-3-1 D/C:2007+

SPP04N60C3, SPP04N60C3., SPP04N60S5 Datasheet download

Five Points

Part Number: SPP04N60C3

Category: Discrete Semiconductor Products

MFG: Infineon Technologies

Package Cooled: P-TO220-3-1

D/C: 2007+

Description: MOSFET N-CH 600V 4.5A TO-220

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SPP04N60C3 Parameters

Technical/Catalog Information	SPP04N60C3
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25° C	4.5A
Rds On (Max) @ Id, Vgs	950 mOhm @ 2.8A, 10V
Input Capacitance (Ciss) @ Vds	490pF @ 25V
Power - Max	50W
Packaging	Tube
Gate Charge (Qg) @ Vgs	25nC @ 10V
Package / Case	TO-220AB
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	SPP04N60C3 SPP04N60C3 SPP04N60C3IN ND SPP04N60C3INND SPP04N60C3IN

SPP04N60C3 Maximum Ratings

Parameter	Symbol	Value		Unit
Parameter	Symbol	SPP_B	SPA	Unit
Continuous drain current T_C = 25 °C T_C= 100 °C	I_D	4.5 2.8	4.5¹) 2.8¹)	A
Pulsed drain current, t_p limited by T_jmax	I_D _puls	13.5	13.5	A
Avalanche energy, single pulse I_D=3.4A, V_DD=50V	E_AS	130	130	mJ
Avalanche energy, repetitive t_AR limited by T_jmax²) I_D=4.5A, V_DD=50V	E_AR	0.4	0.4	mJ
Avalanche current, repetitive t_AR limited by T_jmax	I_AR	4.5	4.5	A
Gate source voltage static	V_GS	±20	±20	V
Gate source voltage AC (f >1Hz)	V_GS	±30	±30
Power dissipation, T_C = 25°C	P_tot	50	31	W
Operating and storage temperature	T_j, T_stg	-55...+150		°C
Drain Source voltage slope V_DS = 480 V, I_D = 4.5 A, T_j = 125 °C	dv/dt	50		V/ns

SPP04N60C3 Features

• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• High peak current capability
• Improved transconductance
• P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

SPP04N60S5 Parameters

Technical/Catalog Information	SPP04N60S5
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25° C	4.5A
Rds On (Max) @ Id, Vgs	950 mOhm @ 2.8A, 10V
Input Capacitance (Ciss) @ Vds	580pF @ 25V
Power - Max	50W
Packaging	Tube
Gate Charge (Qg) @ Vgs	22.9nC @ 10V
Package / Case	TO-220
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	SPP04N60S5 SPP04N60S5 SPP04N60S5IN ND SPP04N60S5INND SPP04N60S5IN

SPP04N60S5 Maximum Ratings

Parameter	Symbol	Value	Unit
Continuous drain current T_C = 25 °C T_C= 100 °C	I_D	4.5 2.8	A
Pulsed drain current, t_p limited by T_jmax	I_D _puls	9	A
Avalanche energy, single pulse I_D=3.4A, V_DD=50V	E_AS	130	mJ
Avalanche energy, repetitive t_AR limited by T_jmax²) I_D=4.5A, V_DD=50V	E_AR	0.4	mJ
Avalanche current, repetitive t_AR limited by T_jmax	I_AR	4.5	A
Gate source voltage	V_GS	±20	V
Gate source voltage AC (f >1Hz)	V_GS	±30
Power dissipation, T_C = 25°C	P_tot	50	W
Operating and storage temperature	T_j, T_stg	-55...+150	°C
Drain Source voltage slope V_DS = 480 V, I_D = 4.5 A, T_j = 125 °C	dv/dt	20	V/ns

SPP04N60S5 Features

• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance

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