SPP11N60CFD

MOSFET N-CH 650V 11A TO-220

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SeekIC No. : 003432696 Detail

SPP11N60CFD: MOSFET N-CH 650V 11A TO-220

floor Price/Ceiling Price

US $ 1.09~1.09 / Piece | Get Latest Price
Part Number:
SPP11N60CFD
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~500
  • Unit Price
  • $1.09
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Quick Details

Series: CoolMOS™ Manufacturer: Infineon Technologies
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Standard Drain to Source Voltage (Vdss): 650V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 11A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 440 mOhm @ 7A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 5V @ 500µA Gate Charge (Qg) @ Vgs: 64nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 1200pF @ 25V
Power - Max: 125W Mounting Type: Through Hole
Package / Case: TO-220-3 Supplier Device Package: PG-TO220-3    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Current - Continuous Drain (Id) @ 25° C: 11A
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-220-3
Power - Max: 125W
Input Capacitance (Ciss) @ Vds: 1200pF @ 25V
Drain to Source Voltage (Vdss): 650V
Gate Charge (Qg) @ Vgs: 64nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 500µA
Series: CoolMOS™
Manufacturer: Infineon Technologies
Supplier Device Package: PG-TO220-3
Rds On (Max) @ Id, Vgs: 440 mOhm @ 7A, 10V


Features:

· New revolutionary high voltage technology
· Ultra low gate charge
· Periodic avalanche rated
· Extreme dv/dt rated
· High peak current capability
· Intrinsic fast-recovery body diode
· Extreme low reverse recovery charge




Specifications

Parameter
Symbol
Value
Unit
Continuous drain current
TC =25 °C
TC =100 °C
ID
11
7
A
Pulsed drain current, tp limited by Tjmax
ID puls
28
Avalanche energy, single pulse
ID=5.5A, VDD=50V
EAS
340
mJ
Avalanche energy, repetitive tAR limited by Tjmax1)
ID=11A, VDD=50V
EAR
0.6
Avalanche current, repetitive tAR limited by Tjmax
IAR
11
A
 Reverse diode dv/dt
IS=11A, VDS=480V, Tj=125°C
 
dv/dt

 40

 V/ns

Gate source voltage static
VGS
±20
V
Gate source voltage AC (f >1Hz)
VGS
±30
Power dissipation, Tc=25°C
Ptot
125
W
Operating and storage temperature
Tj , Tstg
-55... +150
°C



Parameters:

Technical/Catalog InformationSPP11N60CFD
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25° C11A
Rds On (Max) @ Id, Vgs440 mOhm @ 7A, 10V
Input Capacitance (Ciss) @ Vds 1200pF @ 25V
Power - Max125W
PackagingTube
Gate Charge (Qg) @ Vgs64nC @ 10V
Package / CaseTO-220
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names SPP11N60CFD
SPP11N60CFD
SPP11N60CFDIN ND
SPP11N60CFDINND
SPP11N60CFDIN



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