SPP100N03S203

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Vgs(th) (Max) @ Id: 4V @ 250µA
Current - Continuous Drain (Id) @ 25° C: 100A
Mounting Type: Through Hole
Package / Case: TO-220-3
Gate Charge (Qg) @ Vgs: 150nC @ 10V
Packaging: Bulk
Power - Max: 300W
Input Capacitance (Ciss) @ Vds: 7020pF @ 25V
Manufacturer: Infineon Technologies
Series: OptiMOS™
Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 80A, 10V
Supplier Device Package: P-TO220AB


Parameters:

Technical/Catalog Information	SPP100N03S203
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	100A
Rds On (Max) @ Id, Vgs	3.3 mOhm @ 80A, 10V
Input Capacitance (Ciss) @ Vds	7020pF @ 25V
Power - Max	300W
Packaging	Tube
Gate Charge (Qg) @ Vgs	150nC @ 10V
Package / Case	TO-220AB
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	SPP100N03S203 SPP100N03S203