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SPP11N60C3., SPP11N65S5, SPP11N80C3

Table of contents:
Info of SPP11N60C3.
Info of SPP11N65S5
Info of SPP11N80C3

SPP11N60C3., SPP11N65S5, SPP11N80C3 Selling Leads, Datasheet

MFG:Infineon Technologies Category:Discrete Semiconductor Products Package Cooled:05+/06+ D/C:07+

SPP11N60C3., SPP11N65S5, SPP11N80C3 Datasheet download

Five Points

Part Number: SPP11N80C3

Category: Discrete Semiconductor Products

MFG: Infineon Technologies

Package Cooled: 05+/06+

D/C: 07+

Description: MOSFET N-CH 800V 11A TO-220AB

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SPP11N80C3 Parameters

Technical/Catalog Information	SPP11N80C3
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	800V
Current - Continuous Drain (Id) @ 25° C	11A
Rds On (Max) @ Id, Vgs	450 mOhm @ 7.1A, 10V
Input Capacitance (Ciss) @ Vds	1600pF @ 100V
Power - Max	156W
Packaging	Tube
Gate Charge (Qg) @ Vgs	85nC @ 10V
Package / Case	TO-220AB
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	SPP11N80C3 SPP11N80C3 SPP11N80C3IN ND SPP11N80C3INND SPP11N80C3IN

SPP11N80C3 Maximum Ratings

Parameter	Symbol	Value		Unit
Parameter	Symbol	SPP	SPA	Unit
Continuous drain current T_C = 25 °C T_C= 100 °C	I_D	11 7.1	11¹) 7.1¹)	A
Pulsed drain current, t_p limited by T_jmax	I_D _puls	33	33	A
Avalanche energy, single pulse I_D=2.2A, V_DD=50V	E_AS	470	470	mJ
Avalanche energy, repetitive t_AR limited by T_jmax2) I_D=11A, V_DD=50V	E_AR	0.2	0.2	mJ
Avalanche current, repetitive t_AR limited by T_jmax	I_AR	11	11	A
Gate source voltage	V_GS	±20	±20	V
Gate source voltage AC (f >1Hz)	V_GS	±30	±30
Power dissipation, T_C = 25°C	P_tot	156	41	W
Operating and storage temperature	T_j, T_stg	-55...+150		°C
Drain Source voltage slope V_DS = 640 V, I_D = 11 A, T_j = 125 °C	dv/dt	50		V/ns

²Repetitve avalanche causes additional power losses that can be calculated as P_AV=E_AR*f.

SPP11N80C3 Features

• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
• P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

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