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SPP11N60CFD, SPP11N60S5, SPP11N65C3

Table of contents:
Info of SPP11N60CFD
Info of SPP11N60S5
Info of SPP11N65C3

SPP11N60CFD, SPP11N60S5, SPP11N65C3 Selling Leads, Datasheet

MFG:Infineon Technologies Category:Discrete Semiconductor Products Package Cooled:0807+ D/C:07+

SPP11N60CFD, SPP11N60S5, SPP11N65C3 Datasheet download

Five Points

Part Number: SPP11N60CFD

Category: Discrete Semiconductor Products

MFG: Infineon Technologies

Package Cooled: 0807+

D/C: 07+

Description: MOSFET N-CH 650V 11A TO-220

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SPP11N60CFD Parameters

Technical/Catalog Information	SPP11N60CFD
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25° C	11A
Rds On (Max) @ Id, Vgs	440 mOhm @ 7A, 10V
Input Capacitance (Ciss) @ Vds	1200pF @ 25V
Power - Max	125W
Packaging	Tube
Gate Charge (Qg) @ Vgs	64nC @ 10V
Package / Case	TO-220
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	SPP11N60CFD SPP11N60CFD SPP11N60CFDIN ND SPP11N60CFDINND SPP11N60CFDIN

SPP11N60CFD Maximum Ratings

Parameter	Symbol	Value	Unit
Continuous drain current TC =25 °C TC =100 °C	I_D	11 7	A
Pulsed drain current, t_p limited by T_jmax	I_D _puls	28	A
Avalanche energy, single pulse I_D=5.5A, V_DD=50V	E_AS	340	mJ
Avalanche energy, repetitive t_AR limited by T_jmax1) I_D=11A, V_DD=50V	E_AR	0.6	mJ
Avalanche current, repetitive t_AR limited by T_jmax	I^_AR	11	A
Reverse diode dv/dt I_S=11A, V_DS=480V, T_j=125°C	dv/dt	40	V/ns
Gate source voltage static	V_GS	±20	V
Gate source voltage AC (f >1Hz)	V_GS	±30	V
Power dissipation, Tc=25°C	P_tot	125	W
Operating and storage temperature	T_j, T_stg	-55... +150	°C

SPP11N60CFD Features

· New revolutionary high voltage technology
· Ultra low gate charge
· Periodic avalanche rated
· Extreme dv/dt rated
· High peak current capability
· Intrinsic fast-recovery body diode
· Extreme low reverse recovery charge

SPP11N60S5 Parameters

Technical/Catalog Information	SPP11N60S5
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25° C	11A
Rds On (Max) @ Id, Vgs	380 mOhm @ 7A, 10V
Input Capacitance (Ciss) @ Vds	1460pF @ 25V
Power - Max	125W
Packaging	Tube
Gate Charge (Qg) @ Vgs	54nC @ 10V
Package / Case	TO-220AB
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	SPP11N60S5 SPP11N60S5 SPP11N60S5IN ND SPP11N60S5INND SPP11N60S5IN

SPP11N65C3 Parameters

Technical/Catalog Information	SPP11N65C3
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25° C	11A
Rds On (Max) @ Id, Vgs	380 mOhm @ 7A, 10V
Input Capacitance (Ciss) @ Vds	1200pF @ 25V
Power - Max	125W
Packaging	Tube
Gate Charge (Qg) @ Vgs	60nC @ 10V
Package / Case	TO-220
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	SPP11N65C3 SPP11N65C3 SPP11N65C3IN ND SPP11N65C3INND SPP11N65C3IN

SPP11N65C3 Maximum Ratings

Parameter	Symbol	Value		Unit
Parameter	Symbol	SPP_I	SPA	Unit
Continuous drain current T_C = 25 °C T_C= 100 °C	I_D	11 7	11¹) 7¹)	A
Pulsed drain current, t_p limited by T_jmax	I_D _puls	33	33	A
Avalanche energy, single pulse I_D=2.5A, V_DD=50V	E_AS	340	340	mJ
Avalanche energy, repetitive t_AR limited by T_jmax²) I_D=4A, V_DD=50V	E_AR	0.6	0.6	mJ
Avalanche current, repetitive t_AR limited by T_jmax	I_AR	4	4	A
Gate source voltage	V_GS	±20	±20	V
Gate source voltage AC (f >1Hz)	V_GS	±30	±30
Power dissipation, T_C = 25°C	P_tot	125	33	W
Operating and storage temperature	T_j, T_stg	-55...+150		°C
Drain Source voltage slope V_DS = 480 V, I_D = 11 A, T_j = 125 °C	dv/dt	50		V/ns

²Repetitve avalanche causes additional power losses that can be calculated as P_AV=E_AR*f.

SPP11N65C3 Features

• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• High peak current capability
• Improved transconductance

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