MFG:Infineon Technologies Category:Discrete Semiconductor Products Package Cooled:INF/SIE D/C:2008+
SPP15P10P, SPP16N50C3, SPP17N80C2 Datasheet download
Category: Discrete Semiconductor Products
MFG: Infineon Technologies
Package Cooled: INF/SIE
D/C: 2008+
Description: MOSFET N-CH 560V 16A TO-220AB
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PDF/DataSheet Download
Datasheet: SPP15P10P
File Size: 85220 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: SPP16N50C3
File Size: 372174 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: SPP02N60C3
File Size: 289482 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
| Technical/Catalog Information | SPP15P10P |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25° C | 15A |
| Rds On (Max) @ Id, Vgs | 240 mOhm @ 10.6A, 10V |
| Input Capacitance (Ciss) @ Vds | 1180pF @ 25V |
| Power - Max | 128W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 50nC @ 10V |
| Package / Case | TO-220AB |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | SPP15P10P SPP15P10P SPP15P10PIN ND SPP15P10PINND SPP15P10PIN |
|
Parameter |
Symbol |
Value |
Unit |
| Continuous drain current TC = 25 °C TC = 100 °C |
ID |
-15 -10.6 |
A |
| Pulsed drain current TC=25°C |
ID puls |
-60 | |
| Avalanche energy, single pulse I D=-15 A , VDD=-25V, RGS=25Ω |
EAS |
230 |
mJ |
| Reverse diode dv/dt I S=-15A, VDS=-48V, di/dt=-200A/µs, Tjmax=150°C |
dv/dt |
6 |
kV/µs |
| Gate source voltage |
VGS |
±20 |
V |
| Power dissipation TC=25°C |
Ptot |
128 |
W |
| Operating and storage temperature |
Tj , Tstg |
-55... +175 |
°C |
| IEC climatic category; DIN IEC 68-1 |
|
55/175/56 |
|
• P-Channel
• Enhancement mode
• Avalanche rated
• dv/dt rated
| Technical/Catalog Information | SPP16N50C3 |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 560V |
| Current - Continuous Drain (Id) @ 25° C | 16A |
| Rds On (Max) @ Id, Vgs | 280 mOhm @ 10A, 10V |
| Input Capacitance (Ciss) @ Vds | 1600pF @ 25V |
| Power - Max | 160W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 66nC @ 10V |
| Package / Case | TO-220AB |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | SPP16N50C3 SPP16N50C3 SPP16N50C3IN ND SPP16N50C3INND SPP16N50C3IN |
| Parameter | Symbol | Value | Unit | |
| SPP_B_I | SPA | |||
| Continuous drain current TC = 25 °C TC = 100 °C |
ID | 16 10 |
161) 101) |
A |
| Pulsed drain current, tp limited by Tjmax | ID puls | 48 | 48 | A |
| Avalanche energy, single pulse ID=8A, VDD=50V |
EAS | 460 | 460 | mJ |
| Avalanche energy, repetitive tAR limited by Tjmax2) ID=16A, VDD=50V |
EAR | 0.64 | 0.64 | |
| Avalanche current, repetitive tAR limited by Tjmax | IAR | 16 | 16 | A |
| Gate source voltage | VGS | ±20 | ±20 | V |
| Gate source voltage AC (f >1Hz) | VGS | ±30 | ±30 | |
| Power dissipation, TC = 25°C | Ptot | 160 | 34 | W |
| Operating and storage temperature | Tj , Tstg | -55...+150 | °C | |
| Drain Source voltage slope VDS = 400 V, ID = 16 A, Tj = 125 °C |
dv/dt | 50 | V/ns | |
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