MFG:Infineon Technologies Category:Discrete Semiconductor Products Package Cooled:07+ D/C:TO-220
SPP17N80C3, SPP17N80C3XK, SPP18P06P Datasheet download
Category: Discrete Semiconductor Products
MFG: Infineon Technologies
Package Cooled: 07+
D/C: TO-220
Description: MOSFET P-CH 60V 18.7A TO-220AB
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PDF/DataSheet Download
Datasheet: SPP17N80C3
File Size: 341868 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: SPP02N60C3
File Size: 289482 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: SPP18P06P
File Size: 102812 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
| Technical/Catalog Information | SPP17N80C3 |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 800V |
| Current - Continuous Drain (Id) @ 25° C | 17A |
| Rds On (Max) @ Id, Vgs | 290 mOhm @ 11A, 10V |
| Input Capacitance (Ciss) @ Vds | 2320pF @ 25V |
| Power - Max | 208W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 177nC @ 10V |
| Package / Case | TO-220AB |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | SPP17N80C3 SPP17N80C3 SPP17N80C3IN ND SPP17N80C3INND SPP17N80C3IN |
| Parameter | Symbol | Value | Unit | |
| SPP_B | SPA | |||
| Continuous drain current TC = 25 °C TC = 100 °C |
ID | 17 11 |
171) 111) |
A |
| Pulsed drain current, tp limited by Tjmax | ID puls | 51 | 51 | A |
| Avalanche energy, single pulse ID=3.4A, VDD=50V |
EAS | 670 | 670 | mJ |
| Avalanche energy, repetitive tAR limited by Tjmax2) ID=17A, VDD=50V |
EAR | 0.5 | 0.5 | |
| Avalanche current, repetitive tAR limited by Tjmax | IAR | 17 | 17 | A |
| Gate source voltage | VGS | ±20 | ±20 | V |
| Gate source voltage AC (f >1Hz) | VGS | ±30 | ±30 | |
| Power dissipation, TC = 25°C | Ptot | 208 | 42 | W |
| Operating and storage temperature | Tj , Tstg | -55...+150 | °C | |
| Drain Source voltage slope VDS = 640 V, ID = 17 A, Tj = 125 °C |
dv/dt | 50 | V/ns | |
| Technical/Catalog Information | SPP18P06P |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25° C | 18.7A |
| Rds On (Max) @ Id, Vgs | 130 mOhm @ 13.2A, 10V |
| Input Capacitance (Ciss) @ Vds | 860pF @ 25V |
| Power - Max | 81.1W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 28nC @ 10V |
| Package / Case | TO-220AB |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | SPP18P06P SPP18P06P SPP18P06PIN ND SPP18P06PINND SPP18P06PIN |
| Parameter | Symbol | Value | Unit |
| Continuous drain current TC = 25 °C TC = 100 °C |
ID | -18.6 -13.2 |
A |
| Pulsed drain current TC = 25 °C |
ID puls | -74.4 | |
| Avalanche energy, single pulse ID =-18.6A, VDD = -25 V, RGS = 25 W |
EAS | 150 | mJ |
| Avalanche energy, periodic limited by Tjmax | EAR | 8 | |
| Reverse diode dv/dt IS = -18.6 A, VDS = -48 V, di/dt = 200 A/s, Tjmax = 175 °C |
dv/dt | 6 | kV/s |
| Gate source voltage | VGS | ±20 | V |
| Power dissipation TC = 25 °C |
Ptot | 80 | W |
| Operating and storage temperature | Tj , Tstg | -55... +175 | °C |
| IEC climatic category; DIN IEC 68-1 | 55/175/56 |
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