MFG:Infineon Technologies Category:Discrete Semiconductor Products Package Cooled:INF/SIE D/C:06+
SPP20N06C2, SPP20N60C2, SPP20N60C3 Datasheet download
Category: Discrete Semiconductor Products
MFG: Infineon Technologies
Package Cooled: INF/SIE
D/C: 06+
Description: MOSFET N-CH 650V 20.7A TO-220
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PDF/DataSheet Download
Datasheet: SPP02N60C3
File Size: 289482 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: SPP20N60C2
File Size: 167307 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: SPP20N60C3
File Size: 322160 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
| Technical/Catalog Information | SPP20N60C2 |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 650V |
| Current - Continuous Drain (Id) @ 25° C | 20A |
| Rds On (Max) @ Id, Vgs | 190 mOhm @ 13A, 10V |
| Input Capacitance (Ciss) @ Vds | 3000pF @ 25V |
| Power - Max | 208W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 103nC @ 10V |
| Package / Case | TO-220AB |
| FET Feature | Standard |
| Lead Free Status | Request Inventory Verification |
| RoHS Status | Request Inventory Verification |
| Other Names | SPP20N60C2 SPP20N60C2 SPP20N60C2IN ND SPP20N60C2INND SPP20N60C2IN |
| Parameter | Symbol | Value | Unit | |
| SPP_B | SPA | |||
| Continuous drain current TC = 25 °C TC = 100 °C |
ID | 20 13 |
201) 131) |
A |
| Pulsed drain current, tp limited by Tjmax | ID puls | 40 | 40 | A |
| Avalanche energy, single pulse ID=10A, VDD=50V |
EAS | 690 | 690 | mJ |
| Avalanche energy, repetitive tAR limited by Tjmax2) ID=20A, VDD=50V |
EAR | 1 | 1 | |
| Avalanche current, repetitive tAR limited by Tjmax | IAR | 20 | 20 | A |
| Reverse diode dv/dt IS = 20 A, VDS < VDD, di/dt=100A/s, Tjmax=150°C |
dv/dt | 6 | 6 | V/ns |
| Gate source voltage | VGS | ±20 | ±20 | V |
| Gate source voltage AC (f >1Hz) | VGS | ±30 | ±30 | |
| Power dissipation, TC = 25°C | Ptot | 208 | 34.5 | W |
| Operating and storage temperature | Tj , Tstg | -55...+150 | °C | |
| Technical/Catalog Information | SPP20N60C3 |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 650V |
| Current - Continuous Drain (Id) @ 25° C | 20.7A |
| Rds On (Max) @ Id, Vgs | 190 mOhm @ 13.1A, 10V |
| Input Capacitance (Ciss) @ Vds | 2400pF @ 25V |
| Power - Max | 208W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 114nC @ 10V |
| Package / Case | TO-220 |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | SPP20N60C3 SPP20N60C3 SPP20N60C3IN ND SPP20N60C3INND SPP20N60C3IN |
The SPP20N60C3 is designed as one kind of cool MOS power transistor that has eight points of features:(1)worldwide best RDS(on) in TO 220;(2)improved transconductance;(3)P-TO-220-3-31: fully isolated package (2500 VAC; 1 minute);(4)new revolutionary high voltage technology;(5)extreme dv/dt rated;(6)ultra low gate charge;(7)high peak current capability;(8)periodic avalanche rated.
The absolute maximum ratings of the SPP20N60C3 can be summarized as:(1)continuous drain current Tc=25 °C:20.7 A;(2)continuous drain current Tc=100 °C:13.1 A;(3)pulsed drain current, tp limited by Tjmax:62.1 A;(4)avalanche energy, single pulse ID=10A, VDD=50V:690 mJ;(5)gate source voltage static:±20 V;(6)gate source voltage AC (f >1Hz):±30 V;(7)power dissipation, Tc=25°C:208 W;(8)operating and storage temperature:-55 to +150 °C;(9)drain source voltage slope:50 V/ns.
The electrical characteristics of the SPP20N60C3 can be summarized as:(1)drain-source breakdown voltage:600 V;(2)drain-source avalanche breakdown voltage:700 V;(3)gate threshold voltage:2.1 to 3.9 V;(4)gate-source leakage current:100 nA;(5)gate input resistance:0.54;(6)transconductance:17.5 S;(7)input capacitance:2400 pF;(8)output capacitance:780 pF;(9)reverse transfer capacitance:50 pF;(10)turn-on delay time:10 ns. If you want to know more information such as the electrical characteristics about the SPP20N60C3, please download the datasheet in www.seekic.com or www.chinaicmart.com .
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