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SPP20N60CFD, SPP20N60S5, SPP20N65C3

Table of contents:
Info of SPP20N60CFD
Info of SPP20N60S5
Info of SPP20N65C3

SPP20N60CFD, SPP20N60S5, SPP20N65C3 Selling Leads, Datasheet

MFG:Infineon Technologies Category:Discrete Semiconductor Products Package Cooled:INF/SIE D/C:06+

SPP20N60CFD, SPP20N60S5, SPP20N65C3 Datasheet download

Five Points

Part Number: SPP20N60CFD

Category: Discrete Semiconductor Products

MFG: Infineon Technologies

Package Cooled: INF/SIE

D/C: 06+

Description: MOSFET N-CH 650V 20.7A TO-220

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SPP20N60CFD Parameters

Technical/Catalog Information	SPP20N60CFD
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25° C	20.7A
Rds On (Max) @ Id, Vgs	220 mOhm @ 13.1A, 10V
Input Capacitance (Ciss) @ Vds	2400pF @ 25V
Power - Max	208W
Packaging	Tube
Gate Charge (Qg) @ Vgs	124nC @ 10V
Package / Case	TO-220
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	SPP20N60CFD SPP20N60CFD SPP20N60CFDIN ND SPP20N60CFDINND SPP20N60CFDIN

SPP20N60CFD Maximum Ratings

Parameter	Symbol	Value	Unit
Continuous drain current TC = 25 °C TC = 100 °C	I_D	20.7 13.1	A
Pulsed drain current, t_p limited by T_jmax	I_D _puls	52	A
Avalanche energy, single pulse I_D = 10 A, V_DD = 50 V	E_AS	690	mJ
Avalanche energy, repetitive t_AR limited by T_jmax1) I_D=20 A, V_DD=50 V	E_AR	1	mJ
Avalanche current, repetitive t_AR limited by T_jmax	I^_AR	20	A
Reverse diode dv/dt I_S=20.7A, V_DS=480V, T_j=125°C	dv/dt	40	V/ns
Gate source voltage	V_GS	±20	V
Gate source voltage AC (f >1Hz)	V_GS	±30	V
Power dissipation, TC = 25°C	P_tot	208	W
Operating and storage temperature	Tj , Tstg	-55... +150	°C

SPP20N60CFD Features

· New revolutionary high voltage technology
· Worldwide best RDS(on) in TO 220
· Ultra low gate charge
· Periodic avalanche rated
· Extreme dv/dt rated
· High peak current capability
· Intrinsic fast-recovery body diode
· Extreme low reverse recovery charge

SPP20N60S5 Parameters

Technical/Catalog Information	SPP20N60S5
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25° C	20A
Rds On (Max) @ Id, Vgs	190 mOhm @ 13A, 10V
Input Capacitance (Ciss) @ Vds	3000pF @ 25V
Power - Max	208W
Packaging	Tube
Gate Charge (Qg) @ Vgs	103nC @ 10V
Package / Case	TO-220AB
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	SPP20N60S5 SPP20N60S5 SPP20N60S5IN ND SPP20N60S5INND SPP20N60S5IN

SPP20N60S5 Maximum Ratings

Parameter	Symbol	Value	Unit
Continuous drain current T_C = 25 °C T_C= 100 °C	I_D	20 13	A
Pulsed drain current, t_p limited by T_jmax	I_D _puls	40	A
Avalanche energy, single pulse I_D=10A, V_DD=50V	E_AS	690	mJ
Avalanche energy, repetitive t_AR limited by T_jmax¹) I_D=20A, V_DD=50V	E_AR	1	mJ
Avalanche current, repetitive t_AR limited by T_jmax	I_AR	20	A
Gate source voltage	V_GS	±20	V
Gate source voltage AC (f >1Hz)	V_GS	±30	V
Power dissipation, T_C = 25°C	P_tot	208	W
Operating and storage temperature	T_j, T_stg	-55...+150	°C
Drain Source voltage slope V_DS = 480 V, I_D = 20 A, T_j = 125 °C	dv/dt	20	V/ns

1 Repetitve avalanche causes additional power losses that can be calculated as P_AV=E_AR*f.

SPP20N60S5 Features

• New revolutionary high voltage technology
• Worldwide best R_DS(on) in TO 220
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance

SPP20N65C3 Parameters

Technical/Catalog Information	SPP20N65C3
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25° C	20.7A
Rds On (Max) @ Id, Vgs	190 mOhm @ 13.1A, 10V
Input Capacitance (Ciss) @ Vds	2400pF @ 25V
Power - Max	208W
Packaging	Tube
Gate Charge (Qg) @ Vgs	114nC @ 10V
Package / Case	TO-220
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	SPP20N65C3 SPP20N65C3 SPP20N65C3IN ND SPP20N65C3INND SPP20N65C3IN

SPP20N65C3 Maximum Ratings

Parameter	Symbol	Value		Unit
Parameter	Symbol	SPP_I	SPA	Unit
Continuous drain current T_C = 25 °C T_C= 100 °C	I_D	20.7 13.1	20.7¹) 13.1¹)	A
Pulsed drain current, t_p limited by T_jmax	I_D _puls	62.1	62.1	A
Avalanche energy, single pulse I_D=3.5A, V_DD=50V	E_AS	690	690	mJ
Avalanche energy, repetitive t_AR limited by T_jmax²) I_D=7A, V_DD=50V	E_AR	1	1	mJ
Avalanche current, repetitive t_AR limited by T_jmax	I_AR	7	7	A
Gate source voltage	V_GS	±20	±20	V
Gate source voltage AC (f >1Hz)	V_GS	±30	±30
Power dissipation, T_C = 25°C	P_tot	208	34.5	W
Operating and storage temperature	T_j, T_stg	-55...+150		°C
Drain Source voltage slope V_DS = 480 V, I_D = 20.7 A, T_j = 125 °C	dv/dt	50		V/ns

SPP20N65C3 Features

• New revolutionary high voltage technology
• Worldwide best RDS(on) in TO 220
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• High peak current capability
• Improved transconductance

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