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SPP210K-Z, SPP210N-Z, SPP2301

Table of contents:
Info of SPP210K-Z
Info of SPP210N-Z
Info of SPP2301

SPP210K-Z, SPP210N-Z, SPP2301 Selling Leads, Datasheet

MFG:FUJISOKU Package Cooled:NEW AND ORIGINAL D/C:08+/09+

SPP210K-Z, SPP210N-Z, SPP2301 Datasheet download

Five Points

Part Number: SPP210K-Z

MFG: FUJISOKU

Package Cooled: NEW AND ORIGINAL

D/C: 08+/09+

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SPP2301 General Description

The SPP2301 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density,DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits,and low in-line power loss are needed in a very small outline surface mount package.

SPP2301 Maximum Ratings

Parameter		Symbol	Typical	Unit
Drain-Source Voltage		V_DSS	-20	V
Gate Source Voltage		V_GSS	±12	V
Continuous Drain Current(TJ=150)	TA=25	I_D	-2.5	A
	TA=70		-1.5
Pulsed Drain Current		I_DM	-10	A
Continuous Source Current(Diode Conduction)		I_S	-1.6	A
Power Dissipation	TA=25	P_D	1.25	W
	TA=70		0.8
Operating Junction Temperature		T_J	150
Storage Temperature Range		T_STG	-55/150
Thermal Resistance-Junction to Ambient		R_JA	120	/W

SPP2301 Features

-20V/-2.8A,RDS(ON)=120mΩ@VGS=-4.5V
-20V/-2.0A,RDS(ON)=170mΩ@VGS=-2.5V
Super high density cell design for extremely low RDS (ON)
Exceptional on-resistance and maximum DC current capability
SOT-23-3L package design

SPP2301 Typical Application

Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
DSC
LCD Display inverter

SPP2301 Connection Diagram

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