MFG:Infineon Technologies Category:Discrete Semiconductor Products Package Cooled:confirm D/C:07+
SPP35N10, SPP42N03S2L-13, SPP46N03 Datasheet download
Category: Discrete Semiconductor Products
MFG: Infineon Technologies
Package Cooled: confirm
D/C: 07+
Description: MOSFET N-CH 30V 42A TO-220AB
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PDF/DataSheet Download
Datasheet: SPP35N10
File Size: 492246 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: SPP42N03S2L-13
File Size: 554412 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: SPP46N03
File Size: 91226 KB
Manufacturer: Infineon
Download : Click here to Download
| Technical/Catalog Information | SPP35N10 |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25° C | 35A |
| Rds On (Max) @ Id, Vgs | 44 mOhm @ 26.4A, 10V |
| Input Capacitance (Ciss) @ Vds | 1570pF @ 25V |
| Power - Max | 150W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 65nC @ 10V |
| Package / Case | TO-220AB |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | SPP35N10 SPP35N10 SPP35N10IN ND SPP35N10INND SPP35N10IN |
| Parameter | Symbol | Value | Unit |
| Continuous drain current TC = 25 °C TC = 100 °C |
ID | 35 26.4 |
A |
| Pulsed drain current TC = 25 °C |
ID puls | 140 | |
| Avalanche energy, single pulse ID =35 A, VDD = 25 V, RGS = 25 |
EAS | 245 | mJ |
| Reverse diode dv/dt IS =35 A, VDS = 80 V, di/dt = 200 A/s, Tjmax = 175 °C |
dv/dt | 6 | kV/s |
| Gate source voltage | VGS | ±20 | V |
| Power dissipation TC = 25 °C |
Ptot | 150 | W |
| Operating and storage temperature | Tj , Tstg | -55... +175 | °C |
| IEC climatic category; DIN IEC 68-1 | 55/175/56 |
| Technical/Catalog Information | SPP42N03S2L-13 |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 42A |
| Rds On (Max) @ Id, Vgs | 12.9 mOhm @ 21A, 10V |
| Input Capacitance (Ciss) @ Vds | 1130pF @ 25V |
| Power - Max | 83W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 30.5nC @ 10V |
| Package / Case | TO-220AB |
| FET Feature | Logic Level Gate |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | SPP42N03S2L 13 SPP42N03S2L13 SPP42N03S2L 13IN ND SPP42N03S2L13INND SPP42N03S2L-13IN |
| Parameter | Symbol | Conditions | Value | Unit |
| Continuous drain current1) |
ID | TC=25 °C | 42 | A |
| TC=100 °C | 42 | |||
| Pulsed drain current |
ID puls | TC=25 °C | 248 | |
| Avalanche energy, single pulse |
EAS | ID=42 A, RGS=25 | 110 | mJ |
| Repetitive avalanche energy | EAR | limited by T jmax2) |
8 | mJ |
| Reverse diode dv/dt |
dv/dt | ID=42 A, VDS=24 V, di /dt =200 A/s, T j,max=175 °C |
6 | kV/s |
| Gate source voltage | VGS | ±20 | V | |
| Power dissipation |
Ptot | TC=25 °C | 83 | W |
| Operating and storage temperature | Tj , Tstg | -55 ... 175 | °C | |
| IEC climatic category; DIN IEC 68-1 | 55/175/56 |
1) Current is limited by bondwire; with an RthJC=1.8 K/W the chip is able to carry 64 A at 25°C, for detailed information
see app.-note ANPS071E at www.infineon.com/optimos
2) Defined by design. Not subject to production test
| Parameter | Symbol | Value | Unit |
| Continuous drain current TC = 25 , 1) TC = 100 |
ID | 46 46 |
A |
| Pulsed drain current TC = 25 |
ID puls | 184 | |
| Avalanche energy, single pulse ID = 46 A, VDD = 25 V, RGS = 25 W |
EAS | 250 | mJ |
| Avalanche current,periodic limited by T jmax | IAR | 46 | A |
| Avalanche energy,periodic limited byT j(max) | EAR | 12 | mJ |
| Reverse diode dv/dt IS = 46 A, VDS = 24 V, di/dt = 200 A/s, Tjmax =175 |
dv/dt | 6 | kV/s |
| Gate source voltage | VGS | ±20 | V |
| Power dissipation TC = 25 |
Ptot | 120 | W |
| Operating temperature | Tj | -55...+175 | |
| Storage temperature | Tstg | -55...+175 | |
| IEC climatic category; DIN IEC 68-1 | 55/175/56 |
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