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SSI177-4F, SSI17N60B, SSI1N50B

SSI177-4F, SSI17N60B, SSI1N50B Selling Leads, Datasheet

MFG:FAIRCHILD  Package Cooled:TO-262  D/C:T0-263

SSI177-4F, SSI17N60B, SSI1N50B Picture

SSI177-4F, SSI17N60B, SSI1N50B Datasheet download

Five Points

Part Number: SSI177-4F

 

MFG: FAIRCHILD

Package Cooled: TO-262

D/C: T0-263

 

 

 
 
 
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About SSI10N60B

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Datasheet: SSI10N60B

File Size: 702950 KB

Manufacturer: FAIRCHILD [Fairchild Semiconductor]

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About SSI10N60B

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Datasheet: SSI10N60B

File Size: 702950 KB

Manufacturer: FAIRCHILD [Fairchild Semiconductor]

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About SSI1N50B

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Datasheet: SSI1N50B

File Size: 614619 KB

Manufacturer: FAIRCHILD [Fairchild Semiconductor]

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SSI1N50B General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies, power factor correction and electronic lamp ballasts based on half bridge.

SSI1N50B Maximum Ratings

Symbol Parameter SSW1N50B / SSI1N50B Units
VDSS Drain-Source Voltage 520 V
ID Drain Current - Continuous (TC = 25°C)
                      - Continuous (TC = 100°C)
1.5 A
0.97 A
IDM Drain Current - Pulsed (Note 1) 5.0 A
VGSS Gate-Source Voltage ± 30 V
EAS Single Pulsed Avalanche Energy (Note 2) 100 mJ
IAR Avalanche Current (Note 1) 1.5 A
EAR Repetitive Avalanche Energy (Note 1) 3.6 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns
PD Power Dissipation (TA = 25°C)
3.13 W
Power Dissipation (TC = 25°C)
                         - Derate above 25°C
36 W/°C
0.29
TJ, TSTG Operating and
Storage Temperature Range
-55 to +150 °C
TL Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300 °C

SSI1N50B Features

• 1.5A, 520V, R DS(on) = 5.3Ω @VGS = 10 V
• Low gate charge ( typical 8.3 nC)
• Low Crss ( typical 5.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

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