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SSI1N50BTU, SSI1N60, SSI1N60A

SSI1N50BTU, SSI1N60, SSI1N60A Selling Leads, Datasheet

MFG:Fairchild  Package Cooled:N/A  D/C:N/A

SSI1N50BTU, SSI1N60, SSI1N60A Picture

SSI1N50BTU, SSI1N60, SSI1N60A Datasheet download

Five Points

Part Number: SSI1N50BTU

 

MFG: Fairchild

Package Cooled: N/A

D/C: N/A

 

 

 
 
 
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About SSI10N60B

PDF/DataSheet Download

Datasheet: SSI10N60B

File Size: 702950 KB

Manufacturer: FAIRCHILD [Fairchild Semiconductor]

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About SSI1N60A

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Datasheet: SSI1N60A

File Size: 644047 KB

Manufacturer: FAIRCHILD [Fairchild Semiconductor]

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About SSI1N60A

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Datasheet: SSI1N60A

File Size: 644047 KB

Manufacturer: FAIRCHILD [Fairchild Semiconductor]

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SSI1N60A Maximum Ratings

Symbol Characteristic Value Units
VDSS Drain-to-Source Voltage 600 V
ID Continuous Drain Current (TC=25 ) 1 A
Continuous Drain Current (TC=100 ) 0.6
IDM Drain Current-Pulsed 3 A
VGS Gate-to-Source Voltage ±30 V
EAS Single Pulsed Avalanche Energy 44 mJ
IAR Avalanche Current 1 A
EAR Repetitive Avalanche Energy 3.4 mJ
dv/dt Peak Diode Recovery dv/dt 3.0 V/ns
PD Total Power Dissipation (TA=25) 3.1 W
Total Power Dissipation (TC=25 )
Linear Derating Factor
34
0.27
W
W/
TJ , TSTG Operating Junction and
Storage Temperature Range
- 55 to +150
TL Maximum Lead Temp. for Soldering
Purposes, 1/8" from case for 5-seconds
300
Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
L=80mH, IAS=1A, VDD=50V, RG=27 , Starting TJ =25
ISD 1A, di/dt 60A/ s, VDD BVDSS , Starting TJ =25

SSI1N60A Features

Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 25 mA (Max.) @ VDS = 600V
Low RDS(ON) : 9.390 W (Typ.)

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