SSI2N60B, SSI2N60BTU, SSI2N90ATU Selling Leads, Datasheet
MFG:FAIRCHILD Package Cooled:TO-262 D/C:09+
SSI2N60B, SSI2N60BTU, SSI2N90ATU Datasheet download
Part Number: SSI2N60B
MFG: FAIRCHILD
Package Cooled: TO-262
D/C: 09+
SSI2N60B, SSI2N60BTU, SSI2N90ATU
- Table of contents:
Info of SSI2N60B
Info of SSI2N60BTU
Info of SSI2N90ATU
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About SSI2N60B
PDF/DataSheet Download
Datasheet: SSI2N60B
File Size: 662659 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About SSI10N60B
PDF/DataSheet Download
Datasheet: SSI10N60B
File Size: 702950 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About SSI10N60B
PDF/DataSheet Download
Datasheet: SSI10N60B
File Size: 702950 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
SSI2N60B General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.
SSI2N60B Maximum Ratings
| Symbol | Parameter | SSW2N60B / SSI2N60B | Units |
| VDSS | Drain-Source Voltage | 600 | V |
| ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
2.0 | A |
| 1.3 | A | ||
| IDM | Drain Current - Pulsed (Note 1) | 6.0 | A |
| VGSS | Gate-Source Voltage | ± 30 | V |
| EAS | Single Pulsed Avalanche Energy (Note 2) | 120 | mJ |
| IAR | Avalanche Current (Note 1) | 2.0 | A |
| EAR | Repetitive Avalanche Energy (Note 1) | 5.4 | mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) | 5.5 | V/ns |
| PD | Power Dissipation (TA = 25°C) |
3.13 | W |
| Power Dissipation (TC = 25°C) - Derate above 25°C |
54 | W | |
| 0.43 | W/°C | ||
| TJ, TSTG | Operating and Storage Temperature Range |
-55 to +150 | °C |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 | °C |
SSI2N60B Features
• 2.0A, 600V, R DS(on) = 5.0Ω @VGS = 10 V
• Low gate charge ( typical 12.5 nC)
• Low Crss ( typical 7.6 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Low gate charge ( typical 12.5 nC)
• Low Crss ( typical 7.6 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
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