SSI78Q8377A-CG, SSI78Q8392LCP, SSI7N60B Selling Leads, Datasheet
MFG:SILICOM Package Cooled:QFP D/C:1996
SSI78Q8377A-CG, SSI78Q8392LCP, SSI7N60B Datasheet download
Part Number: SSI78Q8377A-CG
MFG: SILICOM
Package Cooled: QFP
D/C: 1996
MFG:SILICOM Package Cooled:QFP D/C:1996
SSI78Q8377A-CG, SSI78Q8392LCP, SSI7N60B Datasheet download
MFG: SILICOM
Package Cooled: QFP
D/C: 1996
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PDF/DataSheet Download
Datasheet: SSI10N60B
File Size: 702950 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: SSI10N60B
File Size: 702950 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: SSI7N60B
File Size: 671978 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.
Symbol | Parameter | SSW7N60B / SSI7N60B | Units |
VDSS | Drain-Source Voltage | 600 | V |
ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
7.0 | A |
4.4 | A | ||
IDM | Drain Current - Pulsed (Note 1) | 28 | A |
VGSS | Gate-Source Voltage | ± 30 | V |
EAS | Single Pulsed Avalanche Energy (Note 2) | 420 | mJ |
IAR | Avalanche Current (Note 1) | 7.0 | A |
EAR | Repetitive Avalanche Energy (Note 1) | 14.7 | mJ |
dv/dt | Peak Diode Recovery dv/dt (Note 3) | 5.5 | V/ns |
PD | Power Dissipation (TA = 25°C) |
3.13 | W |
Power Dissipation (TC = 25°C) - Derate above 25°C |
147 | W | |
1.18 | W/°C | ||
TJ, TSTG | Operating and Storage Temperature Range |
-55 to +150 | °C |
TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 | °C |