MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:03 D/C:04+
SSN16A-1002BQ, SSN1N45B, SSN1N45BBU Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor
Package Cooled: 03
D/C: 04+
Description: MOSFET N-CHAN 450V 0.5A TO-92
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PDF/DataSheet Download
Datasheet: SSN16A51R0FL13
File Size: 106970 KB
Manufacturer: BITECH [Bi technologies]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: SSN1N45B
File Size: 689238 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: SSN16A51R0FL13
File Size: 106970 KB
Manufacturer: BITECH [Bi technologies]
Download : Click here to Download
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for electronic ballasts based on half bridge configuration.
| Symbol | Parameter | SSN1N45B | Units |
| VDSS | Drain-Source Voltage | 450 | V |
| ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
0.5 | A |
| 0.32 | A | ||
| IDM | Drain Current - Pulsed (Note 1) | 4.0 | A |
| VGSS | Gate-Source Voltage | ± 50 | V |
| EAS | Single Pulsed Avalanche Energy(Note 2) | 108 | mJ |
| IAR | Avalanche Current (Note 1) | 0.5 | A |
| EAR | Repetitive Avalanche Energy (Note 1) | 0.25 | mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) | 5.5 | V/ns |
| PD | Power Dissipation (TA = 25°C) | 0.9 | W |
| Power Dissipation (TL = 25°C) - Derate above 25°C |
2.5 | W | |
| 0.02 | W/°C | ||
| TJ, Tstg | Operating and Storage Temperature Range | -55 to +150 | °C |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 | °C |
| Technical/Catalog Information | SSN1N45BBU |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 450V |
| Current - Continuous Drain (Id) @ 25° C | 500mA |
| Rds On (Max) @ Id, Vgs | 4.25 Ohm @ 250mA, 10V |
| Input Capacitance (Ciss) @ Vds | 240pF @ 25V |
| Power - Max | 900mW |
| Packaging | Bulk |
| Gate Charge (Qg) @ Vgs | 8.5nC @ 10V |
| Package / Case | TO-92 |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | SSN1N45BBU SSN1N45BBU |
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