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SSN1N45B

Features: • 0.5A, 450V, R DS(on) = 4.25Ω @VGS = 10 V• Low gate charge ( typical 6.5 nC)• Low Crss ( typical 6.5 pF)• 100% avalanche tested• Improved dv/dt capability• Gate-Source Voltage ± 50V guaranteedSpecifications Symbol Parameter SSN1N45B Unit...

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SeekIC No. : 004503997 Detail

SSN1N45B: Features: • 0.5A, 450V, R DS(on) = 4.25Ω @VGS = 10 V• Low gate charge ( typical 6.5 nC)• Low Crss ( typical 6.5 pF)• 100% avalanche tested• Improved dv/dt capabil...

SSN1N45B Data Sheet

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Part Number:
SSN1N45B
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 0.5A, 450V, R DS(on) = 4.25Ω @VGS = 10 V
• Low gate charge ( typical 6.5 nC)
• Low Crss ( typical 6.5 pF)
• 100% avalanche tested
• Improved dv/dt capability
• Gate-Source Voltage ± 50V guaranteed


Specifications

Symbol Parameter SSN1N45B Units
VDSS Drain-Source Voltage 450 V
ID Drain Current - Continuous (TC = 25°C)
                       - Continuous (TC = 100°C)		 0.5 A
0.32 A
IDM Drain Current - Pulsed (Note 1) 4.0 A
VGSS Gate-Source Voltage ± 50 V
EAS Single Pulsed Avalanche Energy(Note 2) 108 mJ
IAR Avalanche Current (Note 1) 0.5 A
EAR Repetitive Avalanche Energy (Note 1) 0.25 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns
PD Power Dissipation (TA = 25°C) 0.9 W
Power Dissipation (TL = 25°C)
                          - Derate above 25°C		 2.5 W
0.02 W/°C
TJ, Tstg Operating and Storage Temperature Range -55 to +150 °C
TL Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds		 300 °C



Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar, DMOS technology.

This SSN1N45B has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for electronic ballasts based on half bridge configuration.




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