SSP10N60, SSP10N60A, SSP10N60B Selling Leads, Datasheet
MFG:FAI Package Cooled:TO-220 D/C:07+
SSP10N60, SSP10N60A, SSP10N60B Datasheet download
Part Number: SSP10N60
MFG: FAI
Package Cooled: TO-220
D/C: 07+
SSP10N60, SSP10N60A, SSP10N60B
- Table of contents:
Info of SSP10N60
Info of SSP10N60A
Info of SSP10N60B
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About SSP10N60
PDF/DataSheet Download
Datasheet: SSP10N60
File Size: 931064 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About SSP10N60A
PDF/DataSheet Download
Datasheet: SSP10N60A
File Size: 654840 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About SSP10N60B
PDF/DataSheet Download
Datasheet: SSP10N60B
File Size: 931064 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
SSP10N60A Maximum Ratings
| Symbol | Parameter | Value | Units |
| VDSS | Drain-Source Voltage | 600 | V |
| ID | Drain Current - Continuous (TC = 25°C) |
9 | A |
| Drain Current - Continuous (TC = 100°C) | 5.7 | ||
| IDM | Drain Current - Pulsed | 36 | A |
| VGSS | Gate-Source Voltage | ±30 | V |
| EAS | Single Pulsed Avalanche Energy | 442 | mJ |
| IAR | Avalanche Current | 9 | A |
| EAR | Repetitive Avalanche Energy | 15.6 | mJ |
| dv/dt | Peak Diode Recovery dv/dt | 3.0 | V/ns |
| PD | Power Dissipation (Tc = 25°C) - Derate above 25°C |
156 | W |
| 1.25 | W/°C | ||
| TJ, Tstg | Operating and Storage Temperature Range | -55 to +150 | °C |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
SSP10N60A Features
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 25 A(Max.) @ VDS = 600V
Low R DS(ON) : 0.646 (Typ.)
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 25 A(Max.) @ VDS = 600V
Low R DS(ON) : 0.646 (Typ.)
SSP10N60B General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.
SSP10N60B Maximum Ratings
| Symbol | Parameter | SSP10N60B | SSS10N60B | Units |
| VDSS | Drain-Source Voltage | 600 | V | |
| ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
9.0 | 9.0* | A |
| 5.7 | 5.7 * | A | ||
| IDM | Drain Current - Pulsed (Note 1) | 36 | 36 * | A |
| VGSS | Gate-Source Voltage | ±30 | V | |
| EAS | Single Pulsed Avalanche Energy(Note 2) | 520 | mJ | |
| IAR | Avalanche Current (Note 1) | 9.0 | A | |
| EAR | Repetitive Avalanche Energy (Note 1) | 15.6 | mJ | |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) | 5.5 | V/ns | |
| PD | Power Dissipation (TC = 25°C) - Derate above 25°C |
156 | 50 | W |
| 1.25 | 0.4 | W/°C | ||
| TJ, Tstg | Operating and Storage Temperature Range | -55 to +150 | °C | |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 | °C | |
SSP10N60B Features
• 9.0A, 600V, R DS(on) = 0.8Ω @VGS = 10 V
• Low gate charge ( typical 54 nC)
• Low Crss ( typical 32 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Low gate charge ( typical 54 nC)
• Low Crss ( typical 32 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
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