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SSP10N60A

Features: Avalanche Rugged TechnologyRugged Gate Oxide TechnologyLower Input CapacitanceImproved Gate ChargeExtended Safe Operating AreaLower Leakage Current : 25 A(Max.) @ VDS = 600VLow R DS(ON) : 0.646 (Typ.)Specifications Symbol Parameter Value Units VDSS Drain-Source Voltage 600 ...

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SeekIC No. : 004504013 Detail

SSP10N60A: Features: Avalanche Rugged TechnologyRugged Gate Oxide TechnologyLower Input CapacitanceImproved Gate ChargeExtended Safe Operating AreaLower Leakage Current : 25 A(Max.) @ VDS = 600VLow R DS(ON) : ...

SSP10N60A Data Sheet

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Part Number:
SSP10N60A
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Description



Features:

Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 25 A(Max.) @ VDS = 600V
Low R DS(ON) : 0.646 (Typ.)


Specifications

Symbol Parameter Value Units
VDSS Drain-Source Voltage 600 V
ID Drain Current - Continuous (TC = 25°C)
 9 A
Drain Current - Continuous (TC = 100°C) 5.7
IDM Drain Current - Pulsed 36 A
VGSS Gate-Source Voltage ±30 V
EAS Single Pulsed Avalanche Energy 442 mJ
IAR Avalanche Current 9 A
EAR Repetitive Avalanche Energy 15.6 mJ
dv/dt Peak Diode Recovery dv/dt 3.0 V/ns
PD Power Dissipation (Tc = 25°C)
                     - Derate above 25°C		 156 W
1.25 W/°C
TJ, Tstg Operating and Storage Temperature Range -55 to +150 °C
TL Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds		 300



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