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SSP1N60A, SSP1N60B, SSP20N06

SSP1N60A, SSP1N60B, SSP20N06 Selling Leads, Datasheet

MFG:FAIRCHILD  Package Cooled:TO-220  D/C:03+

SSP1N60A, SSP1N60B, SSP20N06 Picture

SSP1N60A, SSP1N60B, SSP20N06 Datasheet download

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Part Number: SSP1N60A

 

MFG: FAIRCHILD

Package Cooled: TO-220

D/C: 03+

 

 

 
 
 
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  • SSP10N60B

  • Pack: TO Qty: 5000  Adddate: 2024-03-28
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  • Abenic   China
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  • SSP16022FE44

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About SSP1N60A

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Datasheet: SSP1N60A

File Size: 433431 KB

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SSP1N60B Suppliers

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  • SSP1N60B

  • Pack: TO Qty: 5000  Adddate: 2024-03-28
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  • Abenic   China
    Contact: Mr.Wong   MSN:abenic8@hotmail.com
    Tel: 86-755-83019622
    Fax: 86-755-83019622
    (334)
  • SSP10N60B

  • Pack: TO Qty: 5000  Adddate: 2024-03-28
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  • Abenic   China
    Contact: Mr.Wong   MSN:abenic8@hotmail.com
    Tel: 86-755-83019622
    Fax: 86-755-83019622
    (334)
  • SSP16022FE44

  • Vendor: Motorola Qty: 659  Adddate: 2024-03-28
  • Inquire Now
  • Buy best electronic   Iran
    Contact: Mr.saeedhamidi   MSN:buybestelectronic@hotmail.com
    Tel: +98-021-66752722
    Fax: 66753109--
    (12)

About SSP1N60B

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Datasheet: SSP1N60B

File Size: 873195 KB

Manufacturer: FAIRCHILD [Fairchild Semiconductor]

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SSP20N06 Suppliers

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  • SSP10N60B

  • Pack: TO Qty: 5000  Adddate: 2024-03-28
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  • Abenic   China
    Contact: Mr.Wong   MSN:abenic8@hotmail.com
    Tel: 86-755-83019622
    Fax: 86-755-83019622
    (334)
  • SSP16022FE44

  • Vendor: Motorola Qty: 659  Adddate: 2024-03-28
  • Inquire Now
  • Buy best electronic   Iran
    Contact: Mr.saeedhamidi   MSN:buybestelectronic@hotmail.com
    Tel: +98-021-66752722
    Fax: 66753109--
    (12)

About SSP/0N-0A

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Datasheet: SSP/0N-0A

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SSP1N60A Maximum Ratings

Symbol

Characteristic

Value

Units

VDSS

Drain-to-Source Voltage

600

V

ID

Continuous Drain Current (TC=25 )

1

A

Continuous Drain Current (TC=100OC )

0.6

IDM

Drain Current-Pulsed

3

A

VGS

Gate-to-Source Voltage

±30

V

EAS

Single Pulsed Avalanche Energy

44

mJ

IAR

Avalanche Current

3.4

A

EAR

Repetitive Avalanche Energy

3.0

mJ

dv/dt

Peak Diode Recovery dv/dt

3.5

V/ns

PD

Total Power Dissipation (TC=25OC )
Linear Derating FactorW

34
0.27

W/OC

TJ , TSTG

Operating Junction and
Storage Temperature Range

- 55 to +150

OC

TL

Maximum Lead Temp. for Soldering
Purposes, 1/8" from case for 5-seconds

300

SSP1N60A Features

Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 10 A (Max.) @ VDS = 500V
Lower RDS(ON) : 4.046 (Typ.)

SSP1N60B General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.

SSP1N60B Maximum Ratings

Symbol Parameter SSP1N60B SSS1N60B Units
VDSS Drain-Source Voltage 600 V
ID Drain Current - Continuous (TC = 25°C)
                      - Continuous (TC = 100°C)
1.0 1.0* A
0.6 0.6 * A
IDM Drain Current - Pulsed (Note 1) 3.0 3.0 * A
VGSS Gate-Source Voltage ±30 V
EAS Single Pulsed Avalanche Energy(Note 2) 50 mJ
IAR Avalanche Current (Note 1) 1.0 A
EAR Repetitive Avalanche Energy (Note 1) 3.4 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns
PD Power Dissipation (TC = 25°C)
                          - Derate above 25°C
34 17 W
0.27 0.13 W/°C
TJ, Tstg Operating and Storage Temperature Range -55 to +150 °C
TL Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300 °C

SSP1N60B Features

• 1.0A, 600V, R DS(on) = 12Ω @VGS = 10 V
• Low gate charge ( typical 5.9 nC)
• Low Crss ( typical 3.6 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

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