SSP2N60A, SSP2N60A/B, SSP2N60B Selling Leads, Datasheet
MFG:SMG Package Cooled:TO-220 D/C:06+
SSP2N60A, SSP2N60A/B, SSP2N60B Datasheet download
Part Number: SSP2N60A
MFG: SMG
Package Cooled: TO-220
D/C: 06+
SSP2N60A, SSP2N60A/B, SSP2N60B
- Table of contents:
Info of SSP2N60A
Info of SSP2N60A/B
Info of SSP2N60B
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About SSP2N60A
PDF/DataSheet Download
Datasheet: SSP2N60A
File Size: 436211 KB
Manufacturer: Samsung Electronics Inc
Download : Click here to Download
About SSP/0N-0A
PDF/DataSheet Download
Datasheet: SSP/0N-0A
File Size: 175611 KB
Manufacturer:
Download : Click here to Download
About SSP2N60B
PDF/DataSheet Download
Datasheet: SSP2N60B
File Size: 877529 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
SSP2N60B General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well
SSP2N60B Maximum Ratings
| Symbol | Parameter | SSP2N60B | SSS2N60B | Units |
| VDSS | Drain-Source Voltage | 600 | V | |
| ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
2.0 | 2.0* | A |
| 1.3 | 1.3 * | A | ||
| IDM | Drain Current - Pulsed (Note 1) | 6.0 | 6.0 * | A |
| VGSS | Gate-Source Voltage | ±30 | V | |
| EAS | Single Pulsed Avalanche Energy(Note 2) | 120 | mJ | |
| IAR | Avalanche Current (Note 1) | 2.0 | A | |
| EAR | Repetitive Avalanche Energy (Note 1) | 5.4 | mJ | |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) | 5.5 | V/ns | |
| PD | Power Dissipation (TC = 25°C) - Derate above 25°C |
54 | 23 | W |
| 0.43 | 0.18 | W/°C | ||
| TJ, Tstg | Operating and Storage Temperature Range | -55 to +150 | °C | |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 | °C | |
SSP2N60B Features
• 2.0A, 600V, R DS(on) = 5.0Ω @VGS = 10 V
• Low gate charge ( typical 12.5 nC)
• Low Crss ( typical 7.6 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability Typical Characteristics
• Low gate charge ( typical 12.5 nC)
• Low Crss ( typical 7.6 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability Typical Characteristics
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