SSP5N90, SSP5N90A, SSP60N05 Selling Leads, Datasheet
MFG:FAI Package Cooled:TO-220 D/C:08+
SSP5N90, SSP5N90A, SSP60N05 Datasheet download
Part Number: SSP5N90
MFG: FAI
Package Cooled: TO-220
D/C: 08+
SSP5N90, SSP5N90A, SSP60N05
- Table of contents:
Info of SSP5N90
Info of SSP5N90A
Info of SSP60N05
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About SSP5N90
PDF/DataSheet Download
Datasheet: SSP5N90
File Size: 54054 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About SSP5N90A
PDF/DataSheet Download
Datasheet: SSP5N90A
File Size: 54054 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About SSP60N05
PDF/DataSheet Download
Datasheet: SSP60N05
File Size: 274680 KB
Manufacturer: SAMSUNG [Samsung semiconductor]
Download : Click here to Download
SSP5N90A Maximum Ratings
| Symbol | Parameter | Value | Units |
| VDSS | Drain-Source Voltage | 900 | V |
| ID | Drain Current - Continuous (TC = 25°C) |
5 | A |
| Drain Current - Continuous (TC = 100°C) | 3.2 | ||
| IDM | Drain Current - Pulsed | 20 | A |
| VGSS | Gate-Source Voltage | ±30 | V |
| EAS | Single Pulsed Avalanche Energy | 529240 | mJ |
| IAR | Avalanche Current | 5 | A |
| EAR | Repetitive Avalanche Energy | 14 | mJ |
| dv/dt | Peak Diode Recovery dv/dt | 1.5 | V/ns |
| PD | Total Power Dissipation (TC=25 OC) Linear Derating Factor |
140 | W |
| 1.12 | W/°C | ||
| TJ, Tstg | Operating Junction and Storage Temperature Range |
-55 to +150 | °C |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
SSP5N90A Features
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 25 A (Max.) @ VDS = 900V
Low RDS(ON) : 2.300 (Typ.)
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 25 A (Max.) @ VDS = 900V
Low RDS(ON) : 2.300 (Typ.)
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