SSS7N60A, SSS7N60A T, SSS7N60B Selling Leads, Datasheet
MFG:FSC Package Cooled:TO-220 D/C:09+
SSS7N60A, SSS7N60A T, SSS7N60B Datasheet download
Part Number: SSS7N60A
MFG: FSC
Package Cooled: TO-220
D/C: 09+
SSS7N60A, SSS7N60A T, SSS7N60B
- Table of contents:
Info of SSS7N60A
Info of SSS7N60A T
Info of SSS7N60B
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About SSS7N60A
PDF/DataSheet Download
Datasheet: SSS7N60A
File Size: 328671 KB
Manufacturer: SAMSUNG [Samsung semiconductor]
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About SSS-002
PDF/DataSheet Download
Datasheet: SSS-002
File Size: 115553 KB
Manufacturer:
Download : Click here to Download
About SSS7N60B
PDF/DataSheet Download
Datasheet: SSS7N60B
File Size: 937529 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
SSS7N60B General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.
SSS7N60B Maximum Ratings
| Symbol | Parameter | SSP7N60B | SSS7N60B | Units |
| VDSS | Drain-Source Voltage | 600 | V | |
| ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
7.0 | 7.0* | A |
| 4.4 | 4.4* | A | ||
| IDM | Drain Current - Pulsed (Note 1) | 28 | 28 * | A |
| VGSS | Gate-Source Voltage | ±30 | V | |
| EAS | Single Pulsed Avalanche Energy(Note 2) | 420 | mJ | |
| IAR | Avalanche Current (Note 1) | 7.0 | A | |
| EAR | Repetitive Avalanche Energy (Note 1) | 14.7 | mJ | |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) | 5.5 | V/ns | |
| PD | Power Dissipation (TC = 25°C) - Derate above 25°C |
147 | 48 | W |
| 1.18 | 0.38 | W/°C | ||
| TJ, Tstg | Operating and Storage Temperature Range | -55 to +150 | °C | |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 | °C | |
SSS7N60B Features
• 7.0A, 600V, R DS(on) = 1.2Ω @VGS = 10 V
• Low gate charge ( typical 38 nC)
• Low Crss ( typical 23 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• TO-220F package isolation = 4.0kV (Note 6)
• Low gate charge ( typical 38 nC)
• Low Crss ( typical 23 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• TO-220F package isolation = 4.0kV (Note 6)
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