SSU2N90A, SSU3055, SSU3055A Selling Leads, Datasheet
MFG:FAIRCHILD Package Cooled:TO-251 D/C:08+
SSU2N90A, SSU3055, SSU3055A Datasheet download
Part Number: SSU2N90A
MFG: FAIRCHILD
Package Cooled: TO-251
D/C: 08+
SSU2N90A, SSU3055, SSU3055A
- Table of contents:
Info of SSU2N90A
Info of SSU3055
Info of SSU3055A
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About SSU2N90A
PDF/DataSheet Download
Datasheet: SSU2N90A
File Size: 661620 KB
Manufacturer:
Download : Click here to Download
About SSU3055A
PDF/DataSheet Download
Datasheet: SSU3055A
File Size: 330901 KB
Manufacturer: SAMSUNG [Samsung semiconductor]
Download : Click here to Download
About SSU3055A
PDF/DataSheet Download
Datasheet: SSU3055A
File Size: 330901 KB
Manufacturer: SAMSUNG [Samsung semiconductor]
Download : Click here to Download
SSU2N90A Maximum Ratings
|
Symbol |
Characteristic |
Value |
Units |
|
VDSS |
Drain-to-Source Voltage |
900 |
V |
|
ID |
Continuous Drain Current (TC=25 ) |
1.7 |
A |
|
Continuous Drain Current (TC=100OC ) |
1.1 | ||
|
IDM |
Drain Current-Pulsed |
6.8 |
A |
|
VGS |
Gate-to-Source Voltage |
+_ 30 |
V |
|
EAS |
Single Pulsed Avalanche Energy |
214 |
mJ |
|
IAR |
Avalanche Current |
1.7 |
A |
|
EAR |
Repetitive Avalanche Energy |
4.5 |
mJ |
|
dv/dt |
Peak Diode Recovery dv/dt |
1.5 |
V/ns |
|
PD |
Total Power Dissipation (TA=25OC ) * |
3.1 |
W |
|
Total Power Dissipation (TC=25OC ) |
45 | ||
|
TJ , TSTG |
Operating Junction and |
- 55 to +150 |
OC |
|
TL |
Maximum Lead Temp. for Soldering Purposes, 1/8" from case for 5-seconds |
300 |
SSU2N90A Features
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 25 mA (Max.) @ VDS = 900V
Low RDS(ON) : 5.838 W (Typ.)
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 25 mA (Max.) @ VDS = 900V
Low RDS(ON) : 5.838 W (Typ.)
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