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SSU2N80A

Features: Avalanche Rugged TechnologyRugged Gate Oxide TechnologyLower Input CapacitanceImproved Gate ChargeExtended Safe Operating AreaLower Leakage Current : 25 mA (Max.) @ VDS = 800VLow RDS(ON) : 4.688 W (Typ.)Specifications Symbol Characteristic Value Units VDSS Drai...

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SeekIC No. : 004505481 Detail

SSU2N80A: Features: Avalanche Rugged TechnologyRugged Gate Oxide TechnologyLower Input CapacitanceImproved Gate ChargeExtended Safe Operating AreaLower Leakage Current : 25 mA (Max.) @ VDS = 800VLow RDS(ON) :...

SSU2N80A Data Sheet

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Part Number:
SSU2N80A
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Description



Features:

Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 25 mA (Max.) @ VDS = 800V
Low RDS(ON) : 4.688 W (Typ.)


Specifications

Symbol

Characteristic

Value

Units

VDSS

Drain-to-Source Voltage

800

V

ID

Continuous Drain Current (TC=25 )

1.7

A

Continuous Drain Current (TC=100OC )

1.1

IDM

Drain Current-Pulsed

6.8

A

VGS

Gate-to-Source Voltage

+_ 30

V

EAS

Single Pulsed Avalanche Energy

213

mJ

IAR

Avalanche Current

1.7

A

EAR

Repetitive Avalanche Energy

4.5

mJ

dv/dt

Peak Diode Recovery dv/dt

2.0

V/ns

PD

Total Power Dissipation (TA=25OC ) *

45

W
W/OC

Total Power Dissipation (TC=25OC )
Linear Derating Factor

0.36

TJ , TSTG

Operating Junction and
Storage Temperature Range

- 55 to +150

OC

TL

 Maximum Lead Temp. for Soldering
Purposes, 1/8" from case for 5-seconds

300




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