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STB10NK50Z-1, STB10NK60Z, STB10NK60Z-1

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Info of STB10NK50Z-1
Info of STB10NK60Z
Info of STB10NK60Z-1

STB10NK50Z-1, STB10NK60Z, STB10NK60Z-1 Selling Leads, Datasheet

MFG:STMicroelectronics Category:Discrete Semiconductor Products Package Cooled:TO-262 D/C:04+

STB10NK50Z-1, STB10NK60Z, STB10NK60Z-1 Datasheet download

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Part Number: STB10NK60Z-1

Category: Discrete Semiconductor Products

MFG: STMicroelectronics

Package Cooled: TO-262

D/C: 04+

Description: MOSFET N-CH 600V 10A I2PAK

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STB10NK60Z General Description

The SuperMESH™ series is obtained through an extreme optimization of ST's well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.

STB10NK60Z Maximum Ratings

Symbol	Parameter	Value			Unit
Symbol	Parameter	TO-220/ D2PAK/I2PAK	TO-220FP	TO-247	Unit
V_DS	Drain-source Voltage (V_GS = 0)	600			V
V_DGR	Drain-gate Voltage (R_GS = 20 k)	600			V
V_GS	Gate- source Voltage	± 30			V
I_D	Drain Current (continuos) at T_C = 25	10	10(^*)	10	A
I_D	Drain Current (continuos) at T_C = 100	5.7	5.7(^*)	5.7	A
I_DM()	Drain Current (pulsed)	36	36(^*)	36	A
P_tot	Total Dissipation at T_C = 25	115	35	156	W
	Derating Factor	0.92	0.28	1.25	W/
V_ESD(G-S)	Gate source ESD(HBM-C=100pF, R=1.5K)	4000			V
dv/dt (1)	Peak Diode Recovery voltage slope	4.5			V/ns
V_ISO	Insulation Withstand Voltage (DC)	-	2500	-	V
T_j T_stg	Operating Junction Temperature Storage Temperature	55 to 150

() Pulse width limited by safe operating area
(1) I_SD 10 A, di/dt 200A/s, V_DD V_(BR)DSS, T_j T_JMAX.

STB10NK60Z Features

` TYPICAL R_DS(on) = 0.65
` EXTREMELY HIGH dv/dt CAPABILITY
` 100% AVALANCHE TESTED
` GATE CHARGE MINIMIZED
` VERY LOW INTRINSIC CAPACITANCES
` VERY GOOD MANUFACTURING REPEATIBILITY

STB10NK60Z Typical Application

· HIGH CURRENT, HIGH SPEED SWITCHING
· IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC
· LIGHTING

STB10NK60Z-1 Parameters

Technical/Catalog Information	STB10NK60Z-1
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25° C	10A
Rds On (Max) @ Id, Vgs	750 mOhm @ 4.5A, 10V
Input Capacitance (Ciss) @ Vds	1370pF @ 25V
Power - Max	115W
Packaging	Tube
Gate Charge (Qg) @ Vgs	70nC @ 10V
Package / Case	I²Pak, TO-262 (3 straight leads + tab)
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STB10NK60Z 1 STB10NK60Z1

STB10NK60Z-1 General Description

The SuperMESH™ series is obtained through an extreme optimization of ST's well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.

STB10NK60Z-1 Maximum Ratings

Symbol	Parameter	Value			Unit
		TO-220/D²/I²PAK	TO-220FP	TO-247
V_DS	Drain-Source Voltage (V_GS = 0)	600			V
V_DGR	Drain-gate Voltage (R_GS= 20k)	600			V
V_GS	Gate-Source Voltage	±30			V
I_D	Drain Current (continuous) at T_C = 25°C	10	10 3	10	A
I_D	Drain Current (continuous) at T_C = 100°C	5.7	5.7 3	5.7	A
I_DM²	Drain Current (pulsed)	36	36 3	36	A
P_TOT	Total Dissipation at T_C = 25°C	115	35	156	W
	Derating Factor	0.92	0.28	1.25	W/°C
Vesd(G-S)	G-S ESD (HBM C=100pF, R=1.5k)	4000			V
dv/dt¹	Peak Diode Recovery voltage slope	4.5			V/ns
V_ISO	Insulation Withstand Volatge (DC)	-	2500	-	V
Tj Tstg	Operating Junction Temperature Storage Temperature	-55 to 150			°C

(1) I_SD 10A, di/dt 200A/s, V_DD V_(BR)DSS, Tj T_JMAX
(2) Pulse width limited by safe operating area
(3) Limited only by maximum temperature allowed

STB10NK60Z-1 Features

` TYPICAL R_DS(on) = 0.65
` EXTREMELY HIGH dv/dt CAPABILITY
` 100% AVALANCHE TESTED
` GATE CHARGE MINIMIZED
` VERY LOW INTRINSIC CAPACITANCES
` VERY GOOD MANUFACTURING REPEABILITY

STB10NK60Z-1 Typical Application

· HIGH CURRENT, HIGH SPEED SWITCHING
· IDEAL FOR OFF-LINE POWER SUPPLIES,ADAPTOR AND PFC
· LIGHTING

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