STB100NF03L-03-01

The STB100NF03L-03-01 is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

The features of STB100NF03L-03-01 are: (1)typical RDS(on)=0.0026; (2)low threshold drive; (3)100% avalanche tested; (4)logic level device; (5)through-hole IPAK power package in tube; (6)surface-mounting D2PAK power package in tube or in TAPE & REEL.

The following is about the maximum ratings of STB100NF03L-03-01: (1)Drain-source Voltage (VGS = 0): 30 V ; (2)Drain- gate Voltage (RGS = 20 k): 30 V ; (3)Gate-Source Voltage: ± 16 V ; (4)Drain Current (continuous) at Tc = 25 : 100 A  ; (5)Drain Current (continuous) at Tc = 100 : 100 A ; (6)Drain Current (pulsed): 400 A ; (7)Total Dissipation at Tc = 25 : 300 W ; (8)Derating Factor: 2 W/ ; (9)Single Pulse Avalanche Energy: 1.9 J ; (10)Storage Temperature: -55 to 150   ; (11)Operating Junction Temperature: -55 to 175 .