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This Power Mosfet is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
STB45NF06L Maximum Ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS = 0)
60
V
VDGR
Drain-gate Voltage (RGS = 20 k)
60
V
VGS
Gate- source Voltage
±16
V
ID
Drain Current (continuos) at TC = 25°C
38
A
ID
Drain Current (continuos) at TC = 100°C
26
A
IDM ()
Drain Current (pulsed)
152
A
PTOT
Total Dissipation at TC = 25°C
80
W
Derating Factor
0.53
W/°C
dv/dt (1)
Peak Diode Recovery voltage slope
7
V/ns
Tstg
Storage Temperature
65 to 175
°C
Tj
Max. Operating Junction Temperature
65 to 175
°C
STB45NF06L Typical Application
HIGH-EFFICIENCY DC-DC CONVERTERS SOLENOID AND RELAY DRIVERS MOTOR CONTROL, AUDIO AMPLIFIERS DC-DC & DC-AC CONVERTERS
STB45NF06T4 Parameters
Technical/Catalog Information
STB45NF06T4
Vendor
STMicroelectronics
Category
Discrete Semiconductor Products
Mounting Type
Surface Mount
FET Polarity
N-Channel
Drain to Source Voltage (Vdss)
60V
Current - Continuous Drain (Id) @ 25° C
38A
Rds On (Max) @ Id, Vgs
28 mOhm @ 19A, 10V
Input Capacitance (Ciss) @ Vds
980pF @ 25V
Power - Max
80W
Packaging
Tape & Reel (TR)
Gate Charge (Qg) @ Vgs
58nC @ 10V
Package / Case
D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature
Standard
Lead Free Status
Lead Free
RoHS Status
RoHS Compliant
Other Names
STB45NF06T4 STB45NF06T4
STB45NF3LL General Description
This application specific Power MOSFET is the third genaration of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows the best trade-off between on-resistance ang gate charge. When used as high and low side in buck regulators, it gives the best performance in terms of both conduction and switching losses. This is extremely important for motherboards where fast switching and high efficiency are of paramount importance.
STB45NF3LL Maximum Ratings
Symbol
Parameter
Value
Unit
TO-220/D2PAK
TO-220FP
VDS
Drain-source Voltage (VGS = 0)
30
V
VDGR
Drain-gate Voltage (RGS = 20 kW)
30
V
VGS
Gate- source Voltage
± 16
V
ID
Drain Current (continuous) at TC = 25°C
45
27
A
ID
Drain Current (continuous) at TC = 100°C
32
19
A
IDM (·)
Drain Current (pulsed)
180
108
A
PTOT
Total Dissipation at TC = 25°C
70
25
W
Derating Factor
0.46
0.167
W/°C
EAS (1)
Single Pulse Avalanche Energy
241
mJ
Viso
Insulation Withstand Voltage (DC)
-
2500
V
Tstg
Storage Temperature
55 to 175
°C
Tj
Max. Operating Junction Temperature
STB45NF3LL Typical Application
· SPECIFICALLY DESIGNED AND OPTIMISED FOR HIGH EFFICIENCY DC/DC CONVERTERS