STB55NE06L, STB55NE06T4, STB55NF03L Selling Leads, Datasheet
MFG:ST Package Cooled:TO-263 D/C:00
STB55NE06L, STB55NE06T4, STB55NF03L Datasheet download
Part Number: STB55NE06L
MFG: ST
Package Cooled: TO-263
D/C: 00
MFG:ST Package Cooled:TO-263 D/C:00
STB55NE06L, STB55NE06T4, STB55NF03L Datasheet download
MFG: ST
Package Cooled: TO-263
D/C: 00
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Datasheet: STB55NE06L
File Size: 56666 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
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PDF/DataSheet Download
Datasheet: STB010XX
File Size: 409899 KB
Manufacturer: IBM
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PDF/DataSheet Download
Datasheet: STB55NF03L
File Size: 251303 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
This Power Mosfet is the latest development of SGS-THOMSON unique "Single Feature SizeÔ" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
Symbol | Parameter | Value | Unit |
VDS | Drain-source Voltage (VGS = 0) | 60 | V |
VDGR | Drain- gate Voltage (RGS = 20 k) | 60 | V |
VGS | Gate-source Voltage | ± 15 | V |
ID | Drain Current (continuous) at Tc = 25 | 55 | A |
ID | Drain Current (continuous) at Tc = 100 | 39 | A |
IDM(•) | Drain Current (pulsed) | 220 | A |
Ptot | Total Dissipation at Tc = 25 | 130 | W |
Derating Factor | 0.83 | W/ | |
dv/dt | Peak Diode Recovery voltage slope | 7 | V/ns |
Tstg | Storage Temperature | -65 to 175 | |
Tj | Max. Operating Junction Temperature | 175 |
This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
Symbol |
Parameter |
Value |
Unit |
VDS |
Drain-source Voltage (VGS = 0) |
30 |
V |
VDGR |
Drain-gate Voltage (RGS = 20 k) |
30 |
V |
VGS |
Gate- source Voltage |
±16 |
V |
ID |
Drain Current (continuos) at TC = 25°C |
55 |
A |
ID |
Drain Current (continuos) at TC = 100°C |
39 |
A |
IDM (l) |
Drain Current (pulsed) |
220 |
A |
PTOT |
Total Dissipation at TC = 25°C |
80 |
W |
Derating Factor |
0.53 |
W/°C | |
Tstg |
Storage Temperature |
65 to 175 |
°C |
Tj |
Max. Operating Junction Temperature |
175 |
°C |