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STB5NB60, STB5NB60T4, STB5NB80

Table of contents:
Info of STB5NB60
Info of STB5NB60T4
Info of STB5NB80

STB5NB60, STB5NB60T4, STB5NB80 Selling Leads, Datasheet

MFG:ST Package Cooled:TO-263 D/C:00(og stok))

STB5NB60, STB5NB60T4, STB5NB80 Datasheet download

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Part Number: STB5NB60

MFG: ST

Package Cooled: TO-263

D/C: 00(og stok))

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STB5NB60 General Description

Using the latest high voltage MESH OVERLAY process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.

STB5NB60 Maximum Ratings

Symbol	Parameter	Value	Unit
V_DS	Drain-source Voltage (V_GS =0)	600	V
V_DGR	Drain- gate Voltage (R_GS=20kΩ)	600	V
V_GS	Gate-source Voltage	± 30	V
I_D	Drain Current (continuous) at T_c=25	5	A
I_D	Drain Current (continuous) at T_c=100	3.1	A
I_DM(•)	Drain Current (pulsed)	20	A
P_tot	Total Dissipation at Tc =25	100	W
	Derating Factor	0.8	W/
dv/dt(1)	Peak Diode Recovery voltage slope	4.5	V/ns
T_stg	Storage Temperature	-65 to 150
T_j	Max. Operating Junction Temperature	150

STB5NB60 Typical Application

HIGH CURRENT, HIGH SPEED SWITCHING
SWITCH MODE POWER SUPPLIES(SMPS)
DC-AC CONVERTERS FOR WELDING
EQUIPMENTAND UNINTERRUPTIBLE
POWERSUPPLIES AND MOTOR DRIVE

STB5NB80 General Description

Using the latest high voltage MESH OVERLAY] process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.

STB5NB80 Maximum Ratings

Symbol	Parameter	Value	Units
V_DSS	Drain-Source Voltage	800	V
V_DGR	Drain- gate Voltage (R_GS = 20 k)	800	V
V_GS	Gate-source Voltage	±30	V
I_D	Drain Current (continuous) at Tc = 25	5	A
I_D	Drain Current (continuous) at Tc = 100	3.2	A
I_DM(•)	Drain Current (pulsed)	20	A
P_tot	Total Dissipation at Tc = 25	110	W
	Derat ing Factor	0.88	W/
dv/dt (1)	Peak Diode Recovery voltage slope	4	V/ns
T_{s tg}	Storage Temperature	-65 to +150
T_j	Max. Operating Junction Temperature	150

(*) Limited only by maximum temperature allowed

( 1) I_SD 5A, di/dt 200 A/s, V_DD V_(BR)DSS, Tj T_JMAX

STB5NB80 Features

TYPE	V_DSS	R_DS(on)	I_D
STB5NB80	800 V	< 2.2	5 A

` TYPICAL RDS(on) = 1.8
` EXTREMELY HIGH dv/dt CAPABILITY
` 100% AVALANCHE TESTED
` VERY LOW INTRINSIC CAPACITANCES
` GATE CHARGE MINIMIZED
` ADD SUFFIX "T4" FORORDERING IN TAPE & REEL

STB5NB80 Typical Application

· HIGH CURRENT, HIGH SPEED SWITCHING
· DC-AC CONVERTERS FOR WELDING
· EQUIPMENT AND UNINTERRUPTIBLE POWERSUPPLIES AND MOTOR DRIVE

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