STB60NF03L, STB60NF06, STB60NF06L Selling Leads, Datasheet
MFG:ST Package Cooled:9800 D/C:TO
STB60NF03L, STB60NF06, STB60NF06L Datasheet download
Part Number: STB60NF03L
MFG: ST
Package Cooled: 9800
D/C: TO
STB60NF03L, STB60NF06, STB60NF06L
- Table of contents:
Info of STB60NF03L
Info of STB60NF06
Info of STB60NF06L
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About STB60NF03L
PDF/DataSheet Download
Datasheet: STB60NF03L
File Size: 51665 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
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About STB60NF06
PDF/DataSheet Download
Datasheet: STB60NF06
File Size: 329368 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
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About STB60NF06L
PDF/DataSheet Download
Datasheet: STB60NF06L
File Size: 348338 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
STB60NF03L General Description
This Power Mosfet is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing
reproducibility.
STB60NF03L Maximum Ratings
|
Symbol |
Parameter |
Value |
Unit |
| VDS |
Drain-source Voltage (VGS = 0) |
30 |
V |
| VDGR |
Drain-gate Voltage (RGS = 20 k) |
30 |
V |
| VGS |
Gate- source Voltage |
±20 |
V |
| ID |
Drain Current (continuos) at TC = 25°C |
60 |
A |
| ID |
Drain Current (continuos) at TC = 100°C |
42 |
A |
| IDM () |
Drain Current (pulsed) |
240 |
A |
| PTOT |
Total Dissipation at TC = 25°C |
100 |
W |
|
Derating Factor |
0.67 |
W/°C | |
| EAS(1) |
Single Pulse Avalanche Energy |
650 |
V/ns |
| Tstg |
Storage Temperature |
65 to 175 |
°C |
| Tj |
Max. Operating Junction Temperature |
175 |
°C |
STB60NF03L Typical Application
LOW VOLTAGEDC-DC CONVERTERS
HIGH CURRENT, HIGH SPEED SWITCHING
HIGH EFFICIENCY SWITCHING CIRCUITS
HIGH CURRENT, HIGH SPEED SWITCHING
HIGH EFFICIENCY SWITCHING CIRCUITS
STB60NF06 General Description
This Power Mosfet series realized with STMicroelectronicsunique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer application. It is also intended for any application with low gate charge drive requirements.
STB60NF06 Maximum Ratings
|
Symbol |
Parameter |
Value |
Unit |
|
VDS |
Drain-source Voltage (VGS = 0) |
60 |
V |
|
VDGR |
Drain-gate Voltage (RGS = 20 k) |
60 |
V |
|
VGS |
Gate- source Voltage |
± 20 |
V |
|
ID |
Drain Current (continuos) at TC = 25°C |
60 |
A |
|
ID |
Drain Current (continuos) at TC = 100°C |
42 |
A |
|
IDM () |
Drain Current (pulsed) |
240 |
A |
|
PTOT |
Total Dissipation at TC = 25°C |
110 |
W |
|
Derating Factor |
0.73 |
W/°C | |
|
dv/dt (1) |
Peak Diode Recovery voltage slope |
4 |
V/ns |
|
Tstg |
Storage Temperature |
65 to 175 |
°C |
|
Tj |
Max. Operating Junction Temperature |
175 |
°C |
STB60NF06 Typical Application
HIGH-EFFICIENCY DC-DC CONVERTERS
UPS AND MOTOR CONTROL
AUTOMOTIVE
UPS AND MOTOR CONTROL
AUTOMOTIVE
STB60NF06L General Description
This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements.
STB60NF06L Maximum Ratings
|
Symbol |
Parameter |
Value |
Unit | |
|
STB60NF06L STP60NF06L |
STP60NF06LFP | |||
| VDS |
Drain-source Voltage (VGS = 0) |
60 |
V | |
| VDGR |
Drain-gate Voltage (RGS = 20 k) |
60 |
V | |
| VGS |
Gate- source Voltage |
± 15 |
V | |
| ID |
Drain Current (continuous) at TC = 25°C |
60 |
60(*) |
A |
| ID |
Drain Current (continuous) at TC = 100°C |
42 |
42(*) |
A |
| IDM(`) |
Drain Current (pulsed) |
240 |
240(*) |
A |
| Ptot |
Total Dissipation at TC = 25°C |
110 |
30 |
W |
|
Derating Factor |
0.73 |
0.2 |
W/°C | |
| dv/dt (1) |
Peak Diode Recovery voltage slope |
20 |
V/ns | |
| EAS (2) |
Single Pulse Avalanche Energy |
320 |
mJ | |
| VISO |
Insulation Withstand Voltage (DC) |
------ |
2000 |
V |
| Tstg |
Storage Temperature |
-55 to 175 |
°C | |
| Tj |
Operating Junction Temperature | |||
STB60NF06L Typical Application
HIGH-EFFICIENCY DC-DC CONVERTERS
AUTOMOTIVE
AUTOMOTIVE
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