Position: Home > DataSheet > Index S > STB Series > STB7NA40, STB7NB40, STB7NB60

Low Cost Custom Prototype PCB Manufacturer

STB7NA40, STB7NB40, STB7NB60

Table of contents:
Info of STB7NA40
Info of STB7NB40
Info of STB7NB60

STB7NA40, STB7NB40, STB7NB60 Selling Leads, Datasheet

MFG:ST Package Cooled:TO-263 D/C:TO

STB7NA40, STB7NB40, STB7NB60 Datasheet download

Five Points

Part Number: STB7NA40

MFG: ST

Package Cooled: TO-263

D/C: TO

Attentive hint

Want to post a buying lead? If you are not a member yet, please select the specific/related part number first and then fill the quantity and your contact details in the "Request for Quotation Form" on the left, and then click "Send RFQ".Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.

How to buy ?

How long will receive a response.

Top Sellers:

TOP

STB7NA40 Maximum Ratings

Symbol	Parameter	Value	Unit
V_DS	Drain-sourceVoltage(V_GS =0)	400	V
V_DGR	Drain-gateVoltage(R_GS=20k)	400	V
V_GS	Gate-sourceVoltage	±30	V
I_D	DrainCurrent(continuous)atTc =25	6.5	A
I_D	Drain Current(continuous)atTc =100	4.1	A
I_DM(`)	Drain Current(pulsed)	26	A
P_tot	Total DissipationatT =25	100	W
	Derating Factor	0.8	W/
T_stg	Storage Temperature	-65to150
T_j	Max.Operating Junction Temperature	150

(•) Pulse width limited by safe operating area

STB7NA40 Features

TYPE	V_DSS	R_{DS(on )}	ID
STB7NA40	400 V	< 1	6.5 A

` TYPICAL R_DS(on) = 0.82
` ± 30V GATE TO SOURCE VOLTAGE RATING
` 100% AVALANCHE TESTED
` REPETITIVE AVALANCHE DATA AT 100oC
` LOW INTRINSIC CAPACITANCES
` GATE CHARGE MINIMIZED
` REDUCED THRESHOLD VOLTAGE SPREAD
` THROUGH-HOLE I2PAK (TO-262) POWER PACKAGE IN TUBE (SUFFIX "-1")
` SURFACE-MOUNTING D2PACK (TO-263) POWERPACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX "T4")

STB7NA40 Typical Application

· HIGH CURRENT, HIGH SPEED SWITCHING
· SWITCH MODE POWER SUPPLIES (SMPS)
· DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWERSUPPLIES AND MOTOR DRIVE

STB7NB40 General Description

Using the latest high voltage technology, SGS-Thomson has designed an advanced family of power Mosfets with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.

STB7NB40 Maximum Ratings

Symbol	Parameter	Value	Uni t
Symbol	Parameter	STB7NB40	Uni t
V_DS	Drain-source Voltage (V_GS = 0)	400	V
V_DGR	Drain- gate Voltage (R_GS = 20 kW)	400	V
V_GS	Gate-source Voltage	± 30	V
I_D	Drain Current (continuous) at T_c = 25	7	A
I_D	Drain Current (continuous) at T_c = 100	4.4	A
I_DM(•)	Drain Current (pulsed)	28	A
P_tot	Total Dissipation at T_c = 25	100	W
	Derating Factor	0.8	W/
dv/dt(1)	Peak Diode Recovery voltage slope	4.5	V/ns
T_stg	Storage Temperature	-65 to 150
T_j	Max. Operating Junction Temperature	150

(•) Pulse width limited by safe operating area (1) I_SD 7A, di/dt 200 A/ms, V_DD V_(BR)DSS, Tj T_JMAX

STB7NB40 Features

· TYPICAL R_DS(on) = 0.75 W
· EXTREMELY HIGH dv/dt CAPABILITY
· 100% AVALANCHE TESTED
· VERYLOW INTRINSIC CAPACITANCES
· GATECHARGE MINIMIZED
· FOR THROUGH-HOLE VERSION CONTACT SALES OFFICE

STB7NB40 Typical Application

· HIGH CURRENT, HIGH SPEED SWITCHING
· SWITCH MODE POWER SUPPLIES (SMPS)
· DC-AC CONVERTERS FOR WELDING EQUIPMENTAND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE

STB7NB60 General Description

Using the latest high voltage MESH OVERLAY^TM process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.

STB7NB60 Maximum Ratings

Symbol	Parameter	Value	Uni t
V_DS	Drain-source Voltage (V_GS = 0)	600	V
V_DGR	Drain- gate Voltage (R_GS = 20 kW)	600	V
V_GS	Gate-source Voltage	± 30	V
I_D	Drain Current (continuous) at T_c = 25	7.2	A
I_D	Drain Current (continuous) at T_c = 100	4.5	A
I_DM(•)	Drain Current (pulsed)	28.8	A
P_tot	Total Dissipation at T_c = 25	125	W
	Derating Factor	1.0	W/
d_v/dt(1)	Peak Diode Recovery voltage slope	4.5	V/ns
T_stg	Storage Temperature	-65 to 150
T_j	Max. Operating Junction Temperature	150

(•) Pulse width limited by safe operating area (1) I_SD 7A, di/dt 200 A/ms, V_DD V_(BR)DSS, T_j TJMAX

STB7NB60 Features

· TYPICAL R_DS(on) = 1.0 W
· EXTREMELY HIGH dv/dt CAPABILITY
· 100% AVALANCHE TESTED
· VERYLOW INTRINSIC CAPACITANCES
· GATECHARGE MINIMIZED

STB7NB60 Typical Application

· HIGH CURRENT, HIGH SPEED SWITCHING
· SWITCH MODE POWER SUPPLIES (SMPS)
· DC-AC CONVERTERS FOR WELDING EQUIPMENTAND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE

Hotspot Suppliers Product

Product List A B C D E F G H I J K L M N O P Q R S T U V W X Y Z 0 1 2 3 4 5 6 7 8 9

MT58L64L18CT-10

Price: 4-6 USD

MT58L64L18CT-10 TQFP100
DL-7140-211M

Price: 5-6.5 USD

DL-7140-211M laser tube
74LVC74APG

Price: 4-5 USD

74LVC74APG - IC FLIP FLOP D-Type POS-EDG DUAL 14TSSOP
CY28346ZI-2

Price: 6.5-8 USD

CYPRESS - Clock Synthesizer with Differential CPU Outputs
PI5V330QEX

Price: 0.284-0.286 USD

PI5V330QEX Pericom Multiplexer Switch ICs
BSM300GA120DN2

Price: 1-2 USD

IGBT power module, Single switch, 1200 V, Collector-emitter voltage, 430A
SVA150XG04TB

Price: 1-2 USD

a-Si TFT-LCD, NEC, 228.096Hmm, 560V
PC354N1

Price: 0.124-0.2 USD

PC354N1T - Mini-flat Package, AC Input Type Photocoupler - Sharp Electrionic Components
RL1210JR-070R22L

Price: 0.177-0.178 USD

RL1210JR51-XX-BL - Thick Film Chip Resistor Low Ohmic - TAITRON Components Incorporated
STPS140A

Price: 0.053-0.055 USD

STPS140A - POWER SCHOTTKY RECTIFIER - STMicroelectronics
STA013

Price: 1.45-1.5 USD

STA013 - MPEG 2.5 LAYER III AUDIO DECODER - STMicroelectronics
SMBJ5347B

Price: 0.073-0.075 USD

SMBJ5347B - 5 Watt Surface Mount Silicon Zener Diodes - Micro Commercial Components