MFG:STMicroelectronics Category:Discrete Semiconductor Products Package Cooled:TO-263 D/C:00(og stok))
STB7NC80ZT4, STB7NK80Z, STB7NK80Z-1 Datasheet download
Category: Discrete Semiconductor Products
MFG: STMicroelectronics
Package Cooled: TO-263
D/C: 00(og stok))
Description: MOSFET N-CH 800V 5.2A I2PAK
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PDF/DataSheet Download
Datasheet: STB7NC80ZT4
File Size: 555399 KB
Manufacturer: STMicroelectronics
Download : Click here to Download
PDF/DataSheet Download
Datasheet: STB7NK80Z
File Size: 602122 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: STB7NK80Z-1
File Size: 602122 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
The SuperMESH™ series is obtained through an extreme optimization of ST's well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
|
Symbol |
Parameter |
Value |
Unit | |
|
STP7NK80Z STB7NK80Z STB7NK80Z-1 |
STP7NK80ZFP |
|||
|
VDS |
Drain-source Voltage (VGS = 0) |
800 |
V | |
|
VDGR |
Drain-gate Voltage (RGS = 20 kW) |
800 |
V | |
|
VGS |
Gate- source Voltage |
± 30 |
V | |
|
ID |
Drain Current (continuous) at TC = 25 |
5.2 |
5.2 (*) |
A |
|
ID |
Drain Current (continuous) at TC = 100°C |
3.3 |
3.3 (*) |
A |
|
IDM (` ) |
Drain Current (pulsed) |
20.8 |
20.8 (*) |
A |
|
PTOT |
Total Dissipation at TC = 25 |
125 |
30 |
W |
| Derating Factor |
1 |
0.24 |
W/ | |
|
VESD(G-S) |
Gate source ESD(HBM-C=100pF, R=1.5KW) |
4000 |
V | |
|
dv/dt (1) |
Peak Diode Recovery voltage slope |
4.5 |
V/ns | |
|
VISO |
Insulation Withstand Voltage (DC) |
- |
2500 |
V |
|
Tj Tstg |
Operating Junction Temperature Storage Temperature |
-55 to 150 -55 to 150 |
| |
· TYPICAL RDS(on) = 1.5 W
· EXTREMELY HIGH dv/dt CAPABILITY
· 100% AVALANCHE TESTED
· GATE CHARGE MINIMIZED
· VERY LOW INTRINSIC CAPACITANCES
· VERY GOOD MANUFACTURING REPEATIBILITY
· HIGH CURRENT, HIGH SPEED SWITCHING
· SMPS FOR INDUSTRIAL APPLICATION.
· LIGHTING (PREHEATING)
| Technical/Catalog Information | STB7NK80Z-1 |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 800V |
| Current - Continuous Drain (Id) @ 25° C | 5.2A |
| Rds On (Max) @ Id, Vgs | 1.8 Ohm @ 2.6A, 10V |
| Input Capacitance (Ciss) @ Vds | 1138pF @ 25V |
| Power - Max | 125W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 56nC @ 10V |
| Package / Case | I²Pak, TO-262 (3 straight leads + tab) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STB7NK80Z 1 STB7NK80Z1 |
The SuperMESH™ series is obtained through an extreme optimization of ST's well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
|
Symbol |
Parameter |
Value |
Unit | |
|
STP7NK80Z STB7NK80Z STB7NK80Z-1 |
STP7NK80ZFP |
|||
|
VDS |
Drain-source Voltage (VGS = 0) |
800 |
V | |
|
VDGR |
Drain-gate Voltage (RGS = 20 kW) |
800 |
V | |
|
VGS |
Gate- source Voltage |
± 30 |
V | |
|
ID |
Drain Current (continuous) at TC = 25 |
5.2 |
5.2 (*) |
A |
|
ID |
Drain Current (continuous) at TC = 100°C |
3.3 |
3.3 (*) |
A |
|
IDM (` ) |
Drain Current (pulsed) |
20.8 |
20.8 (*) |
A |
|
PTOT |
Total Dissipation at TC = 25 |
125 |
30 |
W |
| Derating Factor |
1 |
0.24 |
W/ | |
|
VESD(G-S) |
Gate source ESD(HBM-C=100pF, R=1.5KW) |
4000 |
V | |
|
dv/dt (1) |
Peak Diode Recovery voltage slope |
4.5 |
V/ns | |
|
VISO |
Insulation Withstand Voltage (DC) |
- |
2500 |
V |
|
Tj Tstg |
Operating Junction Temperature Storage Temperature |
-55 to 150 -55 to 150 |
| |
· TYPICAL RDS(on) = 1.5 W
· EXTREMELY HIGH dv/dt CAPABILITY
· 100% AVALANCHE TESTED
· GATE CHARGE MINIMIZED
· VERY LOW INTRINSIC CAPACITANCES
· VERY GOOD MANUFACTURING REPEATIBILITY
· HIGH CURRENT, HIGH SPEED SWITCHING
· SMPS FOR INDUSTRIAL APPLICATION.
· LIGHTING (PREHEATING)
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