MFG:STMicroelectronics Category:Discrete Semiconductor Products Package Cooled:. D/C:09+
STB80NE03L-06T4, STB80NE06-10, STB80NE06-10-TR Datasheet download
Category: Discrete Semiconductor Products
MFG: STMicroelectronics
Package Cooled: .
D/C: 09+
Description: MOSFET N-CH 30V 80A D2PAK
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PDF/DataSheet Download
Datasheet: STB010XX
File Size: 409899 KB
Manufacturer: IBM
Download : Click here to Download
PDF/DataSheet Download
Datasheet: STB80NE06-10
File Size: 96974 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: STB010XX
File Size: 409899 KB
Manufacturer: IBM
Download : Click here to Download
| Technical/Catalog Information | STB80NE03L-06T4 |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 80A |
| Rds On (Max) @ Id, Vgs | 6 mOhm @ 40A, 10V |
| Input Capacitance (Ciss) @ Vds | 6500pF @ 25V |
| Power - Max | 150W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 130nC @ 5V |
| Package / Case | D²Pak, SMD-220, TO-263 (2 leads + tab) |
| FET Feature | Logic Level Gate |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STB80NE03L 06T4 STB80NE03L06T4 |
This Power MOSFET is the latest development of SGS-THOMSON unique "Single Feature SizeTM" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
| Symbol | Parameter | Value | Unit |
| VDS | Drain-source Voltage (VGS = 0) | 60 | V |
| VDGR | Drain- gate Voltage (RGS = 20 k) | 60 | V |
| VGS | Gate-source Voltage | ± 20 | V |
| ID | Drain Current (continuous) at Tc = 25 | 80 | A |
| ID | Drain Current (continuous) at Tc = 100 | 57 | A |
| IDM(•) | Drain Current (pulsed) | 320 | A |
| Ptot | Total Dissipation at Tc = 25 | 150 | W |
| Derating Factor | 1 | W/ | |
| dv/dt | Peak Diode Recovery voltage slope | 7 | V/ns |
| Tstg | Storage Temperature | -65 to 175 | |
| Tj | Max. Operating Junction Temperature | 175 |
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