STB80NF06, STB80NF10A, STB80NF12 Selling Leads, Datasheet
MFG:ST Package Cooled:05+/06+ D/C:11200
STB80NF06, STB80NF10A, STB80NF12 Datasheet download

Part Number: STB80NF06
MFG: ST
Package Cooled: 05+/06+
D/C: 11200
MFG:ST Package Cooled:05+/06+ D/C:11200
STB80NF06, STB80NF10A, STB80NF12 Datasheet download

MFG: ST
Package Cooled: 05+/06+
D/C: 11200
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PDF/DataSheet Download
Datasheet: STB80NF06T4
File Size: 242087 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: STB010XX
File Size: 409899 KB
Manufacturer: IBM
Download : Click here to Download
PDF/DataSheet Download
Datasheet: STB80NF12
File Size: 513597 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows
extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
|
Symbol |
Parameter |
Value |
Unit |
| VDS |
Drain-source Voltage (VGS = 0) |
60 |
V |
| VDGR |
Drain- gate Voltage (RGS = 20 k) |
60 |
V |
| VGS |
Gate-source Voltage |
± 20 |
V |
| ID |
Drain Current (continuous) at Tc = 25 |
80 |
A |
| ID |
Drain Current (continuous) at Tc = 100 |
80 |
A |
| IDM(•) |
Drain Current (pulsed) |
320 |
A |
| Ptot |
l Dissipation at Tc = 25 |
300 |
W |
|
Derating Factor |
2 |
W/oC | |
| EAS (1) |
Single Pulse Avalanche Energy |
870 |
mJ |
| Tstg |
Storage Temperature |
-65 to 175 |
oC |
| Tj |
Max. Operating Junction Temperature |
175 |
oC |
This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency,high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements.
| Symbol | Parameter | Value | Unit | |
| STB_P_W80NF12 | STP80NF12FP | |||
| VDS |
Drain-source Voltage (VGS = 0) |
120 | V | |
| VDGR |
Drain- gate Voltage (RGS = 20 k) |
120 | V | |
| VGS |
Gate-source Voltage |
±20 | V | |
| ID(*) |
Drain Current (continuous) at Tc = 25 |
80 | 80(#) | A |
| ID |
Drain Current (continuous) at Tc = 100 |
60 | 60(#) | A |
| IDM(•) |
Drain Current (pulsed) |
320 | 320(#) | A |
| Ptot |
Total Dissipation at Tc = 25 |
300 | 45 | W |
|
Derating Factor |
2.0 | 0.3 | W/ | |
|
dv/dt(1) |
Peak Diode Recovery voltage slope |
10 |
V/ns | |
|
EAS (2) |
Single Pulse Avalanche Energy |
700 |
mJ | |
|
VISO |
Insulation Withstand Voltage (DC) |
------ |
2500 |
V |
| Tstg |
Storage Temperature |
-55 to 175 | ||
| Tj |
Max. Operating Junction Temperature | |||
