MFG:STMicroelectronics Category:Discrete Semiconductor Products Package Cooled:2007+ D/C:TO-220F
STF11NM80, STF12A60, STF12NK60Z Datasheet download
Category: Discrete Semiconductor Products
MFG: STMicroelectronics
Package Cooled: 2007+
D/C: TO-220F
Description: MOSFET N-CH 600V 10A TO220FP
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PDF/DataSheet Download
Datasheet: STF11NM80
File Size: 390159 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: STF10NK50Z
File Size: 222084 KB
Manufacturer: ST
Download : Click here to Download
PDF/DataSheet Download
Datasheet: STF10NK50Z
File Size: 222084 KB
Manufacturer: ST
Download : Click here to Download
| Technical/Catalog Information | STF11NM80 |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 800V |
| Current - Continuous Drain (Id) @ 25° C | 11A |
| Rds On (Max) @ Id, Vgs | 400 mOhm @ 5.5A, 10V |
| Input Capacitance (Ciss) @ Vds | 1630pF @ 25V |
| Power - Max | 35W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 43.6nC @ 10V |
| Package / Case | TO-220-3 Full Pack (Straight Leads) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STF11NM80 STF11NM80 497 4338 5 ND 49743385ND 497-4338-5 |
The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company's PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company's proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition's products.
| Symbol | Parameter |
Value |
Unit | |
| TO-220/D2PAK TO-247 |
TO-220FP | |||
| VDS | Drain-source Voltage (VGS = 0) |
800 |
V | |
| VDGR | Drain-gate Voltage (RGS = 20 k) |
800 |
V | |
| VGS | Gate- source Voltage |
±30 |
V | |
| ID | Drain Current (continuos) at TC = 25 |
11 |
11(*) |
A |
| ID | Drain Current (continuos) at TC = 100 |
4.7 |
4.7(*) |
A |
| IDM() | Drain Current (pulsed) |
44 |
44(*) |
A |
| PTOT | Total Dissipation at TC = 25 |
150 |
35 |
W |
| Derating Factor |
1.2 |
0.28 |
W/ | |
| dv/dt (1) | Peak Diode Recovery voltage slope |
15 |
V/ns | |
| Tstg | Storage Temperature |
65 to 150 |
||
| Tj | Max. Operating Junction Temperature | |||
The 800 V MDmesh™ family is very suitable for single switch applications in particular for Flyback and Forward converter topologies.
| Technical/Catalog Information | STF12NK60Z |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25° C | 10A |
| Rds On (Max) @ Id, Vgs | 640 mOhm @ 5A, 10V |
| Input Capacitance (Ciss) @ Vds | 1740pF @ 25V |
| Power - Max | 35W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 59nC @ 10V |
| Package / Case | TO-220-3 Full Pack (Straight Leads) |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STF12NK60Z STF12NK60Z 497 4808 5 ND 49748085ND 497-4808-5 |
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