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STF11NM60N

MOSFET N-channel MOSFET

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SeekIC No. : 00160279 Detail

STF11NM60N: MOSFET N-channel MOSFET

STF11NM60N Data Sheet

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Part Number:
STF11NM60N
Mfg:
STMicroelectronics
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 600 V
Gate-Source Breakdown Voltage : +/- 25 V Continuous Drain Current : 10 A
Resistance Drain-Source RDS (on) : 0.45 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220FP Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220FP
Drain-Source Breakdown Voltage : 600 V
Continuous Drain Current : 10 A
Gate-Source Breakdown Voltage : +/- 25 V
Resistance Drain-Source RDS (on) : 0.45 Ohms


Features:

· 100% avalanche tested
· Low input capacitance and gate charge
· Low gate input resistance


Application

· Switching applications


Specifications

Symbol
Parameter
Value
Unit
TO-220/I²PAK
DPAK/IPAK
TO-220FP
VDS
 Drain-source Voltage (VGS = 0)
600
V
VGS
 Gate- source Voltage
±25
V
ID
 Drain Current (continuos) at TC = 25
10
10(1)
A
ID
 Drain Current (continuos) at TC = 100
6.3
6.3(1)
A
IDM(2)
 Drain Current (pulsed)
40
40(1)
A
PTOT
 Total Dissipation at TC = 25
90
25
W
 Derating Factor
0.8
0.2
W/
dv/dt(3)
 Peak Diode Recovery voltage slope
15
V/ns
Viso
 Insulation Withstand Voltage (DC)
-
2500
V
TSTG

 Operating Junction Temperature
Storage Temperature
-55 to150

1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. ISD 10A, di/dt 400A/s, VDD =80% V(BR)DSS


Description

This series of devices is designed using the second generation of MDmesh™ Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company's strip layout to yield one of the world's lowest onresistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.




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