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This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters.
STF20N20 Maximum Ratings
Symbol
Parameter
Value
Unit
TO-220/DPAK
TO-220FP
VDS
Collector-Source Voltage (VGS = 0 V)
200
V
VDGR
Drain-gate Voltage (RGS = 20 k)
200
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current (continuous) at TC = 25
18
A
ID
Drain Current (continuous) at TC = 100
11
A
IDM(`)
Drain Current (pulsed)
72
A
PTOT
Total Dissipation at TC = 25
90
25
W
Derating Factor
0.72
0.2
W/
dv/dt(1)
Peak Diode Recovery voltage slope
15
V/ns
Tj Tstg
Operating Junction Temperature Storage Temperature
-55 to 150
(`) Pulse width limited by safe operating area (1) ISD 18A, di/dt 400A/s, VDD V(BR)DSS